Allicdata Part #: | NSBC144WF3T5G-ND |
Manufacturer Part#: |
NSBC144WF3T5G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 254MW SOT1123 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | NSBC144WF3T5G Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.06767 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 254mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-1123 |
Supplier Device Package: | SOT-1123 |
Base Part Number: | NSBC1* |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NSBC144WF3T5G is a type of single, pre-biased transistor that belongs to the bipolar junction transistor (BJT) family. This type of transistor is used to process signals and low-level voltage in electronic circuits, including radio frequency (RF) and television, telephony, and industrial applications.
A bipolar junction transistor, or BJT, is a semiconductor device constructed of three elements: the emitter, the base, and the collector. The emitter and collector are doped with different elements. It is these doped elements that create the junction between the emitter and collector that is responsible for controlling current flow.In the case of the NSBC144WF3T5G, the emitter is doped with boron and the collector is doped with silicon.
When a forward voltage is applied to the NSBC144WF3T5G, electrons are pushed from the emitter toward the collector, setting up a current across the collector-base junction in the process. This current flow, known as the common-emitter current gain, is what allows the NSBC144WF3T5G to amplify signals from smaller to larger in power. The operation of a BJT essentially amplifies and modulates the current flowing across it, resulting in a larger voltage output.
When the transistor is biased in one direction, the NSBC144WF3T5G will act as a current amplifier, increasing the current between the emitter and collector. This is the most common mode of operation in the analog world. In the digital world, it is used as an on/off switch, controlling the current flow and thus the signal at its output.
In addition to analog and digital applications, BJTs are also used for RF and television applications, where signal strength and signal modulation are important considerations. In these applications, the NSBC144WF3T5G utilizes its ability to modulate a current flow across its emitter-collector junction in order to control the signal output, providing a finer and more precise signal than can be achieved with standard transistor designs.
The NSBC144WF3T5G is also used in telephony and industrial applications. In telephony, the NSBC144WF3T5G is used to control both the input and output of signals between hardware within a telephone system. In the industrial world, BJTs are utilized to provide amplification and signal modulation in Ethernet and optical communication systems.
The NSBC144WF3T5G is a single, pre-biased BJT that is designed for use in low-level voltage applications. Its ability to modulate currents from smaller to larger in power makes it an ideal choice for applications where signal strength and control are of utmost importance. It is frequently used in audio and video circuits, RF applications, television systems, telephony, optical communication, and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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