NSBC114TPDXV6T1 Allicdata Electronics
Allicdata Part #:

NSBC114TPDXV6T1OS-ND

Manufacturer Part#:

NSBC114TPDXV6T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN/PNP SOT563
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: NSBC114TPDXV6T1 datasheetNSBC114TPDXV6T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Base Part Number: NSBC1*
Supplier Device Package: SOT-563
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 500mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Series: --
Resistor - Emitter Base (R2): --
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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NSBC114TPDXV6T1 Pre-Biased Bipolar Arrays are a popular and durable type of transistor technology. Due to their low power consumption and high efficiency, they are often used in applications where precision and consistent power consumption is required. The NSBC114TPDXV6T1 is typically used in a variety of applications ranging from switching to digital and analog circuit design.Working PrincipleThe NSBC114TPDXV6T1 Pre-Biased Bipolar Array is a monolithic semiconductor integrated circuit composed of a number of NPN transistors connected in series. Each transistor is connected in series and acts as a switch, allowing voltage to pass through when the base-emitter junction is forward biased. The output state of the transistor array is determined by the biasing of the base and emitter junction of each transistor in the array.The NSBC114TPDXV6T1 Pre-Biased Bipolar Array uses a pre-biased configuration wherein the total voltage on the collector is set and maintained by the forward biasing of the base-emitter junction of one of the transistors in the array. This configuration reduces the switching time and allows the array to remain in a stable state over a wide temperature range.Application FieldThe NSBC114TPDXV6T1 Pre-Biased Bipolar Array is a popular and durable transistor technology, providing low power consumption, high efficiency and minimal switching times. This makes it an ideal choice for precision digital and analog circuit design, where fast and consistent power consumption can be beneficial. It’s also often used in high-speed switching applications such as logic circuits, pulse generators, and memory devices.Due to the low power consumption and high efficiency of the NSBC114TPDXV6T1, it is also often used in portable electronic devices, especially those that are powered by batteries. Its low power consumption makes it a great choice for powering small, yet powerful electronics, such as smart phones, tablets, and wearables. Its durability makes it a great choice for applications that require long service life.ConclusionThe NSBC114TPDXV6T1 Pre-Biased Bipolar Array is a powerful and reliable transistor technology, with low power consumption and high efficiency. It’s used in a variety of applications ranging from switching to digital and analog circuit design, and is most often used in high-speed switching applications such as logic circuits and memory devices. It’s also a great choice for powering portable electronics, due to its low power consumption and long service life.

The specific data is subject to PDF, and the above content is for reference

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