NSBC114YPDP6T5G Discrete Semiconductor Products |
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Allicdata Part #: | NSBC114YPDP6T5GOSTR-ND |
Manufacturer Part#: |
NSBC114YPDP6T5G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN/PNP PREBIAS SOT963 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | NSBC114YPDP6T5G Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.06669 |
16000 +: | $ 0.06080 |
24000 +: | $ 0.05688 |
56000 +: | $ 0.05230 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Base Part Number: | NSBC1* |
Supplier Device Package: | SOT-963 |
Package / Case: | SOT-963 |
Mounting Type: | Surface Mount |
Power - Max: | 339mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NSBC114YPDP6T5G from NXP Semiconductor is a pre-biased Bipolar Junction Transistor (BJT) array circuit designed for a wide range of applications. It is constructed using high-performance, high-voltage BJTs in shrink small-outline packages. It is designed to provide high power output and excellent thermal stability in high-voltage applications.
The NSBC114YPDP6T5G consists of six transistors arranged in a reverse-prebiased configuration. It is designed to reduce or eliminate the need for additional staging components or external bias networks. This feature enables a highly reliable power output with minimal current waste and improved thermal stability.
The NSBC114YPDP6T5G is capable of operating at high voltage levels of up to 700V. It provides an extremely high gain range, up to 1.6 times better than conventional bipolar devices and an optimal frequency response with extremely low levels of distortion. The transistor array has an optimized base-collector capacitance, reducing frequency roll-off at high power levels.
The NSBC114YPDP6T5G features a low voltage noise level of 6mV, ensuring reliable operation in demanding audio and video applications. It also has ultra-low switching times of just 2uS and a high current transfer ratio of 1:1, making it ideal for pulse or high-current applications.
The NSBC114YPDP6T5G works by amplifying a weak current or voltage signal to generate a stronger output signal. It amplifies the input voltage/current signal by applying an external bias voltage/current to the base-emitter terminals of the transistor array. This bias voltage/current provides the transistor’s with enough energy to turn on and off when input voltage/current signals are applied. When the transistor is in the on-state, it allows current to flow from the collector to the emitter, enabling the transistor array to amplify the input signal to produce a much larger output signal.
The NSBC114YPDP6T5G is perfectly suited for medium-voltage applications such as motor drive, switch mode power supplies, and audio / video signal processing. With its low noise and high frequency response, it is also suitable for pulse or high-current applications.
The specific data is subject to PDF, and the above content is for reference
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