NSBC143ZDXV6T1G Discrete Semiconductor Products |
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Allicdata Part #: | NSBC143ZDXV6T1GOSTR-ND |
Manufacturer Part#: |
NSBC143ZDXV6T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.5W SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | NSBC143ZDXV6T1G Datasheet/PDF |
Quantity: | 4000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Base Part Number: | NSBC1* |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NSBC143ZDXV6T1G belongs to the category of transistors, specifically bipolar junction transistors (BJTs) and arrays, pre-biased. This type of transistor is composed of a structure with two bipolar junction elements connected together with a shared common region. This arrangement creates a special type of transistor array, allowing for multiple devices to be connected together in order to achieve higher operating voltages, better power capabilities, and improved performance. The NSBC143ZDXV6T1G is an especially useful type of transistor as it provides an extremely easy way to connect multiple transistors together in a pre-biased array.
The primary application of the NSBC143ZDXV6T1G is in power electronics. These power electronic applications may include dc-to-dc converters, low voltage motor controllers, and high voltage power supplies. The device provides a pre-biased array that can help to reduce the circuit complexity of the device, resulting in greater efficiency and improved performance. In addition, the pre-biased array can help ensure that the gate and drain terminals of each transistor in the array remain at the desired voltage point.
The working principle of the NSBC143ZDXV6T1G is based on the concept of a self-biased bipolar junction transistor array, which is created by connecting the emitters of multiple transistors together in a common collector modstage. The collector of the stage serves as the common ground for the array and the emitters provide the driving current for the transistors. Depending on the desired output, the transistor array can be set up to provide either a common collector or common emitter configuration. By using a pre-biased array, the electrons passing through the device are always maintained at the desired voltage level, which improves both power efficiency and performance.
The NSBC143ZDXV6T1G has a number of advantages over more traditional power electronic components. First, the pre-biased array eliminates the need for additional circuitry, which helps to reduce cost, space requirements, and complexity. Additionally, the pre-biased array helps to reduce the operating and switching times, resulting in faster operation. Finally, the improved performance of the array allows for higher power efficiency, as well as increased reliability.
The NSBC143ZDXV6T1G is a powerful and versatile type of power electronics component. With its pre-biased array design, the device can help reduce both the cost and complexity of power circuits, while also providing improved performance and increased power efficiency. As such, the device can be ideal for a wide range of applications, from dc-to-dc converters and motor controllers, to high voltage power supplies and more.
The specific data is subject to PDF, and the above content is for reference
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