NSBC114TDXV6T1 Allicdata Electronics
Allicdata Part #:

NSBC114TDXV6TOSCT-ND

Manufacturer Part#:

NSBC114TDXV6T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.5W SOT563
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: NSBC114TDXV6T1 datasheetNSBC114TDXV6T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Base Part Number: NSBC1*
Supplier Device Package: SOT-563
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 500mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Series: --
Resistor - Emitter Base (R2): --
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

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The NSBC114TDXV6T1 is a bi-polar pre-biased transistors array that is used in many electronic applications. This transistor array is composed of four NPN and four PNP transistors housed in a single device and is commonly used in amplifier and switching applications. It is important to note that the NSBC114TDXV6T1 is not a suitable replacement for transistors without pre-biased contacts, such as the 2N3904 and 2N3906.

The function of a bi-polar pre-biased transistor array is to provide an initial physical state to the transistors that improves the performance of each individual device and the overall performance of the array. This is due to the fact that when the transistor is pre-biased, the base current is set to the optimal level in order to provide the best performance overall. This prevents the transistor from entering a state of non-linear operation which can lead to poor signal integrity and signal distortion.

The NSBC114TDXV6T1 is mainly used in applications such as operational amplifiers, linear amplifiers, switching amplifiers, radio frequency amplifiers, and signal generators. These applications require a high level of precision as well as high speed, and the pre-biased transistors are optimal for these applications.

The NSBC114TDXV6T1 also has many advantages over other bi-polar transistors. It offers the highest gain-bandwidth product when compared to its competitors, has a lower temperature coefficient which improves the stability of the device, and offers better switching times for high frequency applications. Additionally, the pre-biasing of the device allows it to maintain accuracy and linearity across a wide range of frequencies, making it ideal for many high-frequency applications.

The working principle of the NSBC114TDXV6T1 is fairly straightforward. The primary function of the pre-biased transistors is to provide an initial state to the transistors that set the base current to the optimal level and prevent the device from entering a state of non-linear operation. This improves the overall performance and accuracy of the device, as well as increases the speed and reliability of the array.

To summarize, the NSBC114TDXV6T1 is a bi-polar pre-biased transistors array that is composed of four NPN and four PNP transistors housed in a single device. It is mainly used in applications such as operational amplifiers, linear amplifiers, switching amplifiers, radio frequency amplifiers, and signal generators due to its high gain-bandwidth product, low temperature coefficient, and improved switching times for high frequency applications. The working principle of the NSBC114TDXV6T1 is to provide an initial physical state to the transistors to improve their performance and accuracy across a wide range of frequencies.

The specific data is subject to PDF, and the above content is for reference

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