Allicdata Part #: | NSVDTA114EET1G-ND |
Manufacturer Part#: |
NSVDTA114EET1G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V BIPOLAR SC75-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | NSVDTA114EET1G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.03744 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75, SOT-416 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NSVDTA114EET1G is a PNP small signal transitor in a SOT-23 package that is designed for low-voltage, low-power applications. It is a type of bipolar junction transistor (BJT) that can be used as an analog voltage switch, current regulator, linear amplifier and signal processing. This device is pre-biased, meaning that the base is already connected to the battery supply, so the device can be used directly in the circuit without additional external biasing components.
The NSVDTA114EET1G is characterized by a low collector-emitter saturation voltage, low on-state collector-emitter resistance, low base-emitter voltage, and low input capacitance. It has a continuous collector current of 800mA, a voltage drop of 200mV, a output power of 0.2W and a power dissipation of 400mW. The storage of the device is up to 175°C.
The NSVDTA114EET1G works on the principle of a current-controlled current source. As a bi-polar transistor, it has three connections between the collector, base and emitter. When a voltage is applied to the base connection, it allows current to flow from collector to emitter, which then is amplified by the base current. This results in a gain in output current, as well as an increase in output voltage.
The device has a wide range of applications including voltage-controlled current sources, current amplifiers, analog switches, level shifters, and quenching circuit loads. It can also be used in consumer electronics, hobby robotics, and electronic circuits for battery-operated devices. The device is also popular in automotive and entertainment systems for audio and voice applications.
The NSVDTA114EET1G is easy to use, because the device comes pre-biased and no additional biasing components are needed. All you have to do is to properly connect the collector to the power source, the base to the input signal, and the emitter to the ground. The device is cost-effective, durable, and offers excellent operational stability.
The NSVDTA114EET1G is reliable and versatile, making it an ideal choice for various low-power applications. It is a highly reliable device, capable of providing high performance in a wide variety of conditions. It is suitable for applications that require low-power, high-performance, or space-saving components.
The specific data is subject to PDF, and the above content is for reference
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