Allicdata Part #: | NSVDTA114YM3T5G-ND |
Manufacturer Part#: |
NSVDTA114YM3T5G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 260MW SOT723 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | NSVDTA114YM3T5G Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.03202 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Power - Max: | 260mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | SOT-723 |
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The NSVDTA114YM3T5G is a type of single, pre-biased transistor whose various application fields and working principles have made it a popular choice among electrical and electronics engineers. It is a bipolar junction transistor (BJT) that contains various n-layer collected gates. Its various characteristics can be used to determine whether it will be suitable for a given application.
NSVDTA114YM3T5G application field includes mobile communication infrastructure, synthesizers, and test equipment. This type of transistor is suitable for low-voltage, high-speed, linear, and low-power applications. It has the ability to be pre-biased for operation at very low voltages. As it has the feature of being able to work in conditions of high-frequency and low-voltage, it is frequently used in ICs and devices which require low-signal power and speed. Also, this type of BJT has the ability to withstand high-speed switching and high-frequency applications, making it an ideal choice for a variety of electronic circuits.
The working principle of the NSVDTA114YM3T5G follows that of any other bipolar junction transistor. This transistor has three terminal regions or Collectors, a Base and an Emitter. When a current is applied to the collectors, a voltage is applied to the base. This forces electrons to flow through the emitter and into the collector, forming a voltage. The voltage that is produced is then amplified, allowing it to perform commonly used functions such as emiting, switching, and be pre-biased.
The NSVDTA114YM3T5G has various advantages. It has a very fast switching speed and can operate at low voltage. As the current flows from collector to base, it results in very low undesirable leakage current. This enables it to perform efficiently at frequencies up to 50kHz to 80kHz. Other features include good linearity and low input capacitance. This type of transistor also has high current gain, making it suitable for use in devices such as amplifiers, oscillators, and signal-processing circuits.
The NSVDTA114YM3T5G is a compact, reliable, and low-cost single, pre-biased transistor. Its various characteristics and applications combined with its working principles make it a versatile component. Its various advantages make it an excellent choice for the most demanding applications.
The specific data is subject to PDF, and the above content is for reference
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