NSVDTA123EM3T5G

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NSVDTA123EM3T5G is a single, pre-biased bipolar junction transistor (BJT) which offers excellent performance for a variety of application fields and working principles. The transistor is pre-biased with a bipolar junction, meaning the collector and emitter regions are selectively separated by a thin layer of insulator, and a charge balance exists between these two regions. This enables the transistor to offer superior switching performance and stability while also providing a low off-state resistance. The balanced charge also provides low noise and enhanced thermal performance, making the transistor suitable for high frequency and high-temperature applications.

The transistor has a maximum operating voltage range of 200V, a continuous current rating of 300mA and a peak current rating of 500mA. Its maximum operating temperature is 125°C and its maximum power dissipation is 500mW. The maximum collector-to-base voltage rating is 50V, and the minimum breakdown voltage is 4V. The thermal resistance of the transistor is 4K/W. The transistor also features very low output capacitance, making it suitable for high-speed switching applications.

The transistor is suitable for a variety of application fields, such as switching circuits, high voltage power supplies, DC-DC converters, and adjustable microcontrollers. It can be used in an array of circuit designs, including Class B amplifiers and Class D amplifiers, and features a wide range of working principles. It can also be used in high frequency circuits, such as radio frequency circuits, as well as in low frequency circuits, such as avionics and medical applications.

The NSVDTA123EM3T5G is a reliable choice for a variety of applications, offering superior performance and reliability. It features high switching performance, low off-state resistance, low output capacitance, and excellent thermal performance. It is well suited for high frequency and high temperature applications, as well as a variety of circuit designs. Additionally, it features a low breakdown voltage and high collector-to-base voltage rating. This makes the transistor suitable for a range of high voltage applications, offering superior performance and reliability. The transistor is a highly reliable choice for a range of application fields and working principles.

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