NSVDTA143ZET1G

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The NSVDTA143ZET1G is a single, pre-biased, bipolar junction transistor (BJT) from NXP Semiconductors. It is a surface mount, N-channel, vertical, double-diffused metal-oxide-semiconductor (DMOS) device designed for use in power applications. It has a low on resistance of 4.3 Ω and a maximum current rating of 18A @25°C. This device offers excellent performance in both forward and reverse conduction as well as low thermal resistance.

The NSVDTA143ZET1G is designed for power applications such as power management and motor control. It has an integrated precision gate control to provide efficient and precise control of the current. It also features built-in protection against over-voltage, over-temperature, and electrostatic discharge. The DMOS technology gives this device the highest level of efficiency and robustness.

This device is available in a small surface-mount package that is ideal for use in space-constrained environments. It has a low profile and is thermally enhanced for high performance and long operational life. The package is also RoHS-compliant and is lead-free and halogen-free.

The NSVDTA143ZET1G is a pre-biased device, meaning that the bias voltage is provided externally rather than internally. This allows for better performance and easier control of the device. The bias voltage can be controlled with a simple voltage divider, making it ideal for applications requiring accurate control of the current. The device has an integrated temperature compensation feature that eliminates the need for external temperature sensing.

The NSVDTA143ZET1G has a high breakdown voltage, allowing it to operate reliably under high-voltage conditions. The device has a wide range of operating temperatures and is able to withstand high thermal stress. The integrated ESD protection prevents damage to the device due to electrostatic discharge.

The NSVDTA143ZET1G is a versatile device that is suitable for a variety of power management and motor control applications across multiple industries. Its low on resistance and wide operating range make it an ideal choice for applications requiring reliable performance in the presence of high-temperature and high-voltage conditions. With its integrated features and small package size, this device is an excellent choice for cost-sensitive applications.

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