Allicdata Part #: | NSVDTA144EET1G-ND |
Manufacturer Part#: |
NSVDTA144EET1G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V SC75 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | NSVDTA144EET1G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.03744 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75, SOT-416 |
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The NSVDTA144EET1G is a single-stage, pre-biased silicon bipolar transistor from NXP Semiconductors, part of the company’s EET series. Its single-ended design is ideal for applications in which space is at a premium and a pre-biased design is required. The transistor has a small surface area, making it suitable for SMD designs, with an impressive high voltage rating of 250V.
The NSVDTA144EET1G is designed for use in feedback and driver circuits, voltage regulator design, power supplies, and motor control circuits. Its low capacitance and low on-resistance make it ideal for use in high-frequency switching applications. It can be used in circuits with multiple power stages, where each stage must remain isolated from one another. Its small size and light weight make it a good choice for portable electronics, as well as automotive and industrial applications.
The transistor works by using the base-collector junction to control the current flow between the emitter and the collector. When the base receives a positive voltage, the current begins to flow between the emitter and the collector, allowing the output of the transistor to be switched on. When the base voltage decreases, the current stops flowing and the output is consequently switched off. This process, known as transistor action, is used in a wide variety of applications, from simple amplifiers to complex circuits.
The NSVDTA144EET1G has a wide range of features which enable a variety of applications. The pre-biased feature allows the transistor to be used in a single package, reducing the number of components and the amount of space required. The transistor also has a very low on-resistance, which improves efficiency, as well as a capacitance of only 6pF, making it suitable for high-speed switching. The high voltage rating of 250V also makes it suitable for use in demanding power supply design applications.
Overall, the NSVDTA144EET1G is a versatile and reliable single-ended silicon bipolar transistor which can be used in a multitude of applications. Its pre-biased design makes it ideal for applications which require high levels of integration and a small form factor, while its low on-resistance and high voltage rating offer a range of functional benefits. As such, the NSVDTA144EET1G is a convenient and efficient choice for designers looking to achieve optimal performance in their projects.
The specific data is subject to PDF, and the above content is for reference
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