Allicdata Part #: | NSVDTC113EM3T5G-ND |
Manufacturer Part#: |
NSVDTC113EM3T5G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 0.1A SOT723 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | NSVDTC113EM3T5G Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.03202 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 1 kOhms |
Resistor - Emitter Base (R2): | 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 3 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 260mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | SOT-723 |
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The NSVDTC113EM3T5G single, pre-biased transistor is an invaluable device for many applications. It is a two-terminal, three-level device that consists of two vertically aligned PN junctions, one of which is already pre-biased. The device has several important characteristics that make it suitable for a variety of uses.
The NSVDTC113EM3T5G is capable of providing exceptionally high DC current gain, which is important for applications that involve high frequencies and power dissipation. It is also able to attain high forward and reverse voltage drops, making it ideal for power control applications. Additionally, the device is capable of withstanding high temperature and moisture exposure, making it suitable for use in both indoor and outdoor applications.
The NSVDTC113EM3T5G is commonly used in power control devices such as switches, dimmers, and relays. It is also widely used in the electronics industry for the development of circuit boards and other components. In medical applications, the device is used for powering and regulating medical equipment. The device is also commonly utilized in automotive applications, as it is capable of operating in extreme weather conditions.
In terms of its working principle, the NSVDTC113EM3T5G is composed of two vertically aligned PN junctions, one of which is already pre-biased. When a voltage is applied across the device, the current passes through both junctions. The pre-biased one generates a voltage drop that is greater than the applied voltage, resulting in a potential difference between the two junctions, thus creating a flow of current.
The NSVDTC113EM3T5G is also known for its exceptional switching performance. Its fast switching speeds can be attributed to its pre-biased design. Additionally, it is capable of working within tight tolerances and under extreme temperature conditions.
Overall, the NSVDTC113EM3T5G is a valuable device for many applications. It is a two-terminal, three-level device that is capable of providing exceptionally high DC current gain. It is also highly durable and can withstand extreme temperatures and moisture exposure. In terms of its working principle, it is composed of two vertically aligned PN junctions, one of which is already pre-biased, and it is capable of providing exceptional switching performance with fast switching speeds.
The specific data is subject to PDF, and the above content is for reference
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