NSVDTA123JM3T5G

Series:	Automotive, AEC-Q101
Part Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	2.2 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	260mW
Mounting Type:	Surface Mount
Package / Case:	SOT-723
Supplier Device Package:	SOT-723

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The NSVDTA123JM3T5G transistor is a single, pre-biased transistor in the bipolar junction transistor (BJT) family. It is commonly used in applications where precise signal control and voltage amplification are important. The device is made up of two main parts: the emitter, base and collector. The base is the control element of the transistor. It acts as a gate, allowing only a certain amount of current to pass through. The emitter and collector are both current carriers and provide support for current flow. The NSVDTA123JM3T5G is a pre-biased transistor. This means that, before the transistor is put into use, a voltage is applied to it. This voltage is known as the “bias,” and it affects the way that the transistor behaves. For instance, a higher bias will result in more current going through the device, and a lower bias will result in less current. The most common application of an NSVDTA123JM3T5G is in signal control and amplification. As mentioned earlier, the base acts as a “gate” for current flow. This can be used to control the magnitude of the signal being amplified. By adjusting the bias voltage, the base can be made to “open up” more or less, allowing different amounts of current to flow.In a practical application, the NSVDTA123JM3T5G is usually connected to a circuit such as a power amplifier. The power amplifier provides the power needed to drive the transistor, and the base controls the amount of current that can pass through. The collector and emitter then amplify the signal, resulting in a larger output voltage. The NSVDTA123JM3T5G is also commonly used in op-amps and comparators. An op-amp is an electronic circuit that performs mathematical operations, such as addition and subtraction. By connecting the NSVDTA123JM3T5G to an op-amp, the transistor can be used to amplify signals before they are input into an op-amp.Conversely, a comparator is an electronic circuit that compares two different voltage signals. By connecting the NSVDTA123JM3T5G to a comparator, the transistor can be used to compare the signals and to determine which one has the higher voltage.Finally, the NSVDTA123JM3T5G can also be used in applications that require high-frequency signals. By connecting the transistor to an oscillator, it can be used to amplify a signal at frequencies well above the normal range.In conclusion, the NSVDTA123JM3T5G is a single, pre-biased transistor that is commonly used in applications where precise signal control and voltage amplification are important. It is mainly used for signal control, amplification and high-frequency applications, although it can also be used in op-amps and comparators. By adjusting the bias voltage, the transistor can be made to either open up more or less, allowing different amounts of current to flow through.

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