NSVDTC144EM3T5G Allicdata Electronics
Allicdata Part #:

NSVDTC144EM3T5G-ND

Manufacturer Part#:

NSVDTC144EM3T5G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 0.26W SOT723-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: NSVDTC144EM3T5G datasheetNSVDTC144EM3T5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.03682
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 260mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SOT-723
Description

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The NSVDTC144EM3T5G is a single, pre-biased transistor that is used in a wide range of applications. It is a type of bipolar junction transistor (BJT). It is an NPN device and is made up of two N-type (N) and two P-type (P) semiconductors. It is an N-channel device, which means it can switch between its two resistive states. It is a surface-mount device and has a very small package size.

The NSVDTC144EM3T5G has an array of uses, from digital signal processing, signal transmission, and power switching to communication devices, power amplification, and signal conditioning. This versatility is one of its great advantages, as each application can benefit from its pre-biased nature and its low on-resistance.

The NSVDTC144EM3T5G takes advantage of its pre-biased nature in its operation. When the transistor is biased in the correct way, it will operate with a near-zero voltage drop across it. This provides a fast switching time, as well as low power consumption and less heat generation. In addition, its low on-resistance makes it ideal for applications that utilize low-power switching.

The working principle of the NSVDTC144EM3T5G is relatively simple. When it is off, the N-type and the P-type junctions are reverse-biased, meaning no current can flow through the transistor. When a suitable voltage is applied to the base of the transistor, the junctions become forward-biased, and current can flow from the collector to the emitter. By controlling the level of current through the transistor, the voltage on the collector can be controlled, and this is how the transistor works.

The NSVDTC144EM3T5G can be used for a wide range of applications, from digital signal processing to power switching. One of its most important advantages is its small package size and its pre-biased nature, which provides fast switching times and low power consumption. Its low on-resistance also makes it ideal for low-power switching applications. All of these features make it a great choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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