NSVDTA144WET1G Allicdata Electronics
Allicdata Part #:

NSVDTA144WET1G-ND

Manufacturer Part#:

NSVDTA144WET1G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 0.2W SC75-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: NSVDTA144WET1G datasheetNSVDTA144WET1G Datasheet/PDF
Quantity: 1000
6000 +: $ 0.03877
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416
Description

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NSVDTA144WET1G transistors are a type of bipolar, pre-biased single-transistor device. They are designed to provide high-frequency performance in applications where power supply voltage stability and operating temperature range are key factors. This type of transistor is also suitable for use in a variety of other applications, including amplifiers, mixers, oscillators, and logic circuits.

Bipolar transistors generally have three terminals: a base, a collector, and an emitter. The base terminal is used to control the current flow between the collector and the emitter. The current flow is controlled by the voltage applied to the base terminal. The current flow is increased as the voltage applied to the base terminal is increased, and vice versa. It is important to note that the maximum current that can be drawn from the collector is limited by the base current.

The NSVDTA144WET1G transistor has a single pre-biased configuration. This configuration means that the collector-emitter voltage and the base-emitter voltage (Vce and Vbe respectively) can be set before the device is switched on. This is useful when designing circuits with high levels of reliability, as the voltage levels can be adjusted during the prototyping process. It also means that the transistor can be connected to a high-voltage circuit without any additional biasing circuitry required.

The working principle of the device is based on the formation of electron-hole pairs when current is passed through the base terminal. These electron-hole pairs enable current to flow from the collector to the emitter. The amount of current flowing from the collector to the emitter is controlled by the voltage applied to the base terminal, and therefore it is possible to use this transistor as an amplifier or a switch.

The NSVDTA144WET1G transistor is suitable for use in a variety of application fields due to its high-frequency performance, pre-biased configuration, and reliability. It can be used in amplifiers, mixers, oscillators, logic circuits, and many more. It is an ideal choice for applications that require high levels of reliability and stability in terms of power supply voltage and temperature range.

The specific data is subject to PDF, and the above content is for reference

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