Allicdata Part #: | NSVDTA115EET1G-ND |
Manufacturer Part#: |
NSVDTA115EET1G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 0.2W SC75-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | NSVDTA115EET1G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.03877 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 100 kOhms |
Resistor - Emitter Base (R2): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75, SOT-416 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.The NSVDTA115EET1G is a single, pre-biased transistor specifically designed for automotive applications. The device uses a NPN/PNP Darlington structure to provide high switching speed and robust performance. The device is designed to help reduce power consumption and avoid short circuits, making it an ideal component for automotive applications where space on the PCB is at a premium.
The NSVDTA115EET1G operation is based on a NPN/PNP Darlington arrangement. This configuration is used to achieve a fast switching speed and a robust performance that is ideal for automotive applications. The device is pre-biased, meaning that it will immediately turn on when the supply voltage is applied without requiring an additional startup sequence.
The NSVDTA115EET1G is suitable for use in a wide variety of automotive applications such as in power supplies, lighting systems and electronic control systems. It can also be used to provide interface and logic switching applications as well as signal conditioning in automotive radio and audio systems.
When the device is used for power switching applications such as in power supplies, the NPN/PNP Darlington structure of the device helps to reduce power dissipation and provides high power efficiency. It is also suitable for signal conditioning applications because of its NPN/PNP Darlington configuration, which allows it to provide signal isolation between signals and ground.
The NSVDTA115EET1G also offers protection against reverse thermal breakdown. This protection ensures that the transistor will not be damaged when it is placed in a hot environment, even if the voltage applied to the transistor exceeds its maximum rating.
The NSVDTA115EET1G is easy to use, thanks to its pre-biased operation and automated current regulation. This ensures that the device always operates correctly and prevents its output from exceeding the maximum rating of the device.
In conclusion, the NSVDTA115EET1G is an ideal component for automotive applications where space on the PCB is scarce. Its NPN/PNP Darlington structure allows for fast switching speed and robust performance, while its pre-biased operation ensures easy use and reliable operation. Moreover, the device provides reverse thermal breakdown protection and automated current regulation, which makes it perfect for power switching and signal conditioning applications.
The specific data is subject to PDF, and the above content is for reference
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