Allicdata Part #: | NSVDTC123JET1G-ND |
Manufacturer Part#: |
NSVDTC123JET1G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 0.1A SC75 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | NSVDTC123JET1G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.03744 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75, SOT-416 |
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The NSVDTC123JET1G is a single, pre-biased bipolar junction transistor (BJT). It is often used as an electronic switch, providing current amplification and voltage regulation for a wide variety of devices. The NSVDTC123JET1G is able to control up to 2A of current and can handle up to 25V of power.
The BJT consists of three elements: the emitters, collector, and base. These elements interact to produce a current flow, or current amplification, in the device. The base-emitter junction acts as an interface, allowing current to flow between the emitter and collector when a voltage is applied to the base. The current flow is controlled by the degree of “bias” applied to the base, which is typically done with an external circuit. The current amplification is determined by the ratio of collector current to base current, which is known as the current gain. BJTs are classified as either “n-p-n” or “p-n-p” devices, depending on the orientation of the contacts.
The NSVDTC123JET1G is an n-p-n type, pre-biased BJT. This means that the transistor is already biased, meaning the base is already set to a certain voltage, and current flow can occur between the emitter and collector immediately. This feature makes the NSVDTC123JET1G ideal for applications where speed is a concern, because there is no delay while waiting for the external circuit to bias the transistor.
The NSVDTC123JET1G is typically used as an electronic switch in various devices and circuits. When used in this capacity, the transistor acts to control the flow of current through the circuit. The transistor switch can be turned on and off, allowing current to flow or preventing it from flowing, depending on the state of the transistor. This allows for precise control of the current flow in a circuit.
The NSVDTC123JET1G can also be used in conjunction with other components, such as resistors, capacitors, and inductors, to create voltage regulating circuits. By combining the BJT with other components, circuits can be created that regulate voltage levels and protect sensitive components from sudden voltage spikes.
One of the most common applications for the NSVDTC123JET1G is as a voltage regulator. When used in this manner, the BJT circulates a certain amount of current, regardless of the supply voltage. This ensures that the current remains constant and is not subject to fluctuations that would occur in an unprotected circuit.
The NSVDTC123JET1G is a versatile device, capable of being used in a wide range of applications. It is often used as an electronic switch and a voltage regulator, and its pre-biased nature makes it ideal for applications that need rapid response times. Its voltage regulation capabilities make it a valuable component in circuits where current stability is essential.
The specific data is subject to PDF, and the above content is for reference
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