NSVDTC114YM3T5G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A NSVDTC114YM3T5G is an NPN Silicon epitaxial planar transistor, single, pre-biased. The transistor comes from ON Semiconductor\'s SuperSOT™-3 surface mount product family, and provides extremely fast switching performance when applied in amplifying or switching applications.

NSVDTC114YM3T5G transistors feature VCEOs of 30V and continuous current of 500mA. The maximum power dissipation is 250mW, and the junction to ambient thermal resistance is 150°C/W. The device\'s on resistance is typically 93 ohms, which translates to an improvement of nearly 25% in on-state current as compared to earlier versions. The transistor is also RoHS compliant and comes in a 3-lead SOT-23 package that is suitable for surface-mount applications.

The NSVDTC114YM3T5G is well-suited for both amplifier and switching applications. In amplifier applications, the device can be used for both audio and low frequency applications, and for TDMA operation in mobile communication systems. When used as a switch, the device is ideal for high frequency operation, and for applications such as lamp dimmers or higher power DC motor control.

The basic transistor working principle applies to the NSVDTC114YM3T5G. A current applied to the base terminal will control the current that flows from the emitter to the collector. The gain of the transistor will depend on the current applied to the base, and vary with temperature. The current gain, hFE, of the NSVDTC114YM3T5G is typically 60.

The NSVDTC114YM3T5G is also designed to minimize noise susceptibility. The device is created with a laser trimmed thick oxide charge-storage mechanism, shielding the underlying transistor structure from external noise sources. This feature coupled with the device\'s high frequency characteristics, make the the NSVDTC114YM3T5G an ideal choice for high performance applications. Additionally, the device is designed for high frequency operation with a maximum frequency of 1.5GHz.

The NSVDTC114YM3T5G\'s internal structure includes an NPN silicon epitaxial planar transistor suitable for general purpose switching and amplifier applications. The device comes pre-biased, providing benefit over devices requiring bias components, by requiring fewer components for a system design. This reduces bill of materials costs and simplifies system design and assembly.

The NSVDTC114YM3T5G has a wide range of applications, making it an ideal choice in both amplifier and switching applications. With features such as high frequency performance, low noise sensitivity, improved on resistance, and high gain, this device can provide optimal performance in any system design.

The specific data is subject to PDF, and the above content is for reference