NSVDTC143ZM3T5G Allicdata Electronics
Allicdata Part #:

NSVDTC143ZM3T5G-ND

Manufacturer Part#:

NSVDTC143ZM3T5G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 50V 100MA SOT723
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: NSVDTC143ZM3T5G datasheetNSVDTC143ZM3T5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.03202
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 260mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SOT-723
Description

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NSVDTC143ZM3T5G is a single, pre-biased bipolar junction transistor that is widely preferred particularly for very small applications. This transistor is built with the aim to provide control for both AC and DC signals using low power applications. It is mainly used for analogue switching, phase shifting, and other related functions.In terms of structure, the NSVDTC143ZM3T5G transistor consists of three layers. All three layers are separated from each other by an insulating material. The three layers are: the emitter layer, the base layer and the collector layer. The emitter layer is made out of a material that has a large number of free electrons. The base layer is made out of a material with a relatively smaller number of free electrons. The collector layer is made out of a material with a semi-conductive property. The working principle of the NSVDTC143ZM3T5G transistor works with the concept of holes and electrons. The electrons move through the base layer to the collector layer, while the holes move through the emitter layer to the base layer. The transistor is biased when the base layer has an imbalance of electrons and holes, which creates an electric field between the layers.When an electric signal is applied to the NSVDTC143ZM3T5G transistor, the electric field between the base layer and the collector layer will increase, causing the electrons to move through the base layer at a faster rate. When the electrons reach the collector layer, they combine with the holes and create a wave or pulse. This pulse then travels from the collector layer to the base layer and is amplified by the electric field generated by the base layer.The NSVDTC143ZM3T5G transistor is mainly used in the communication field, in conjunction with other transistors and integrated circuits. This type of transistor is also used in audio systems, medical equipment, alarm systems and computer systems. The main advantage of using this transistor is that it can provide a reliable and accurate control of AC signals due to its low power consumption.The NSVDTC143ZM3T5G transistor is widely used as it provides many advantages to its users. It has a low on-capacitance and low power consumption, and is highly reliable and stable. The NSVDTC143ZM3T5G transistor is also widely employed in applications such as RF switching, power switches, regulators and audio amplifiers.To provide the best performance, the NSVDTC143ZM3T5G transistor must be biased correctly. This is done by adjusting the input signal or by using a high resistance biasing network. The biasing of the transistor can also be done manually by adjusting the power supply’s voltage level and base current.To conclude, the NSVDTC143ZM3T5G transistor is a highly reliable and stable transistor, which can provide effective control of both AC and DC signals using low power applications. It is widely used in a variety of fields, such as communication, audio systems, medical equipment, alarm systems and computer systems, due to its advantages, such as its low on-capacitance and low power consumption.

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