NTD20N03L27-1G Allicdata Electronics
Allicdata Part #:

NTD20N03L27-1G-ND

Manufacturer Part#:

NTD20N03L27-1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 20A IPAK
More Detail: N-Channel 30V 20A (Ta) 1.75W (Ta), 74W (Tc) Throug...
DataSheet: NTD20N03L27-1G datasheetNTD20N03L27-1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.75W (Ta), 74W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 27 mOhm @ 10A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The NTD20N03L27-1G is a type of field-effect transistor (FET). Specifically, it is a three terminal, monolithic, complementary MOSFET. FETs regulate current or voltage flow, acting as a switch or gate for electrical signals. The NTD20N03L27-1G is often used in high-power switching applications and functions as an “enhanced power MOSFET” due to its high performance capabilities. As such, it is effective in controlling a wide range of switching activities in power management and automotive applications.

Application Fields

The NTD20N03L27-1G’s enhanced power capabilities makes it suited for several high-power applications. It is particularly useful in power management and automotive applications due to its ability to handle both high- and low-voltage switching activities. It is often used for high-side low-side driver designs in automotive power management systems due to its high-current conduction, along with its capability to reduce electromagnetic interference.

In industrial settings, the NTD20N03L27-1G is increasingly replacing traditional Schottky diodes as an energy-efficient alternative. Additionally, it is also used in energy-efficient power supplies, converters, and inverters. More recently, the FET has been used in a range of applications in residential and commercial settings, such as lighting control, HVAC systems, and audio amplification.

Working Principle

The NTD20N03L27-1G is composed of a gate, source, and drain, which together form the transistor structure. The gate serves as the control center of the switching action, where a voltage is applied to serve as an on/off switch. When a positive voltage is applied to the gate, the MOSFET is turned on and the two channels are connected.

When no voltage is applied to the gate, the NTD20N03L27-1G is in the “off” state and the two channels are not connected. The source and drain electrodes act as a channel or a path, allowing current to flow between them. The source electrode is connected to the negative terminal and the drain is connected to the positive terminal, while the gate is connected to the voltage input.

The drain and source electrodes are also called source and drain resistors, since they serve as resistors to the current passing through them. When a voltage is applied to the gate, it attracts electrostatically charged particles, which act as a conductor, turning the MOSFET “on” and allowing current to pass from the source to the drain.

The NTD20N03L27-1G is used for high-power switching activities due to its ability to handle high currents and its ability to reduce electromagnetic interference. Its fast switching speed and high-capacity current conduction make it an enhanced power MOSFET, capable of handling a wide range of switching activities in both high- and low-voltage applications.

The specific data is subject to PDF, and the above content is for reference

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