
Allicdata Part #: | NTD20N03L27-1G-ND |
Manufacturer Part#: |
NTD20N03L27-1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 20A IPAK |
More Detail: | N-Channel 30V 20A (Ta) 1.75W (Ta), 74W (Tc) Throug... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.75W (Ta), 74W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1260pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18.9nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 10A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTD20N03L27-1G is a type of field-effect transistor (FET). Specifically, it is a three terminal, monolithic, complementary MOSFET. FETs regulate current or voltage flow, acting as a switch or gate for electrical signals. The NTD20N03L27-1G is often used in high-power switching applications and functions as an “enhanced power MOSFET” due to its high performance capabilities. As such, it is effective in controlling a wide range of switching activities in power management and automotive applications.
Application Fields
The NTD20N03L27-1G’s enhanced power capabilities makes it suited for several high-power applications. It is particularly useful in power management and automotive applications due to its ability to handle both high- and low-voltage switching activities. It is often used for high-side low-side driver designs in automotive power management systems due to its high-current conduction, along with its capability to reduce electromagnetic interference.
In industrial settings, the NTD20N03L27-1G is increasingly replacing traditional Schottky diodes as an energy-efficient alternative. Additionally, it is also used in energy-efficient power supplies, converters, and inverters. More recently, the FET has been used in a range of applications in residential and commercial settings, such as lighting control, HVAC systems, and audio amplification.
Working Principle
The NTD20N03L27-1G is composed of a gate, source, and drain, which together form the transistor structure. The gate serves as the control center of the switching action, where a voltage is applied to serve as an on/off switch. When a positive voltage is applied to the gate, the MOSFET is turned on and the two channels are connected.
When no voltage is applied to the gate, the NTD20N03L27-1G is in the “off” state and the two channels are not connected. The source and drain electrodes act as a channel or a path, allowing current to flow between them. The source electrode is connected to the negative terminal and the drain is connected to the positive terminal, while the gate is connected to the voltage input.
The drain and source electrodes are also called source and drain resistors, since they serve as resistors to the current passing through them. When a voltage is applied to the gate, it attracts electrostatically charged particles, which act as a conductor, turning the MOSFET “on” and allowing current to pass from the source to the drain.
The NTD20N03L27-1G is used for high-power switching activities due to its ability to handle high currents and its ability to reduce electromagnetic interference. Its fast switching speed and high-capacity current conduction make it an enhanced power MOSFET, capable of handling a wide range of switching activities in both high- and low-voltage applications.
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NTD20N06LT4G | ON Semicondu... | 0.29 $ | 5000 | MOSFET N-CH 60V 20A DPAKN... |
NTD20N06T4 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 20A DPAKN... |
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NTD24N06L | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 24A DPAKN... |
NTD20N03L27 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 20A DPAKN... |
NTD20N03L27G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 20A DPAKN... |
NTD23N03R | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 25V 3.8A DPAK... |
NTD20N06LT4 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 20A DPAKN... |
NTD20N03L27-1G | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 20A IPAKN... |
NTD25P03LRLG | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 30V 25A DPAKP... |
NTD20N06T4G | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 20A DPAKN... |
NTD24N06-001 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 24A IPAKN... |
NTD20N03L27T4G | ON Semicondu... | 0.29 $ | 5000 | MOSFET N-CH 30V 20A DPAKN... |
NTD25P03LT4G | ON Semicondu... | -- | 54400 | MOSFET P-CH 30V 25A DPAKP... |
NTD25P03L1 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 30V 25A IPAKP... |
NTD24N06T4G | ON Semicondu... | 0.29 $ | 1000 | MOSFET N-CH 60V 24A DPAKN... |
NTD2410F | Sensata-Cryd... | 0.0 $ | 1000 | RELAY SSR AC OUT 240VAC 1... |
NTD24N06-1G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 24A IPAKN... |
NTD23N03R-1G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 25V 3.8A IPAK... |
NTD20N06-001 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 20A IPAKN... |
NTD2955G | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 60V 12A DPAKP... |
NTD2955T4G | ON Semicondu... | -- | 5000 | MOSFET P-CH 60V 12A DPAKP... |
NTD24N06G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 24A DPAKN... |
NTD20N06-1G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 20A IPAKN... |
NTD2425-10 | Sensata-Cryd... | 0.0 $ | 1000 | RELAY SSR AC OUT 240VAC 2... |
NTD2410 | Sensata-Cryd... | 0.0 $ | 1000 | RELAY SSR AC OUT 240VAC 1... |
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