NTD23N03RT4 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.14W (Ta), 22.3W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	225pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	3.76nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	45 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 5V
Current - Continuous Drain (Id) @ 25°C:	3.8A (Ta), 17.1A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The NTD23N03RT4 is a field effect transistor (FET) made from a specific combination of silicon, aluminum, low pressure nitrogen, and other various materials. It is a useful building block for creating essential devices used in a variety of applications, such as power amplifiers, relay controls, and high frequency oscillators. This article will discuss the applications and working principles of the NTD23N03RT4.The NTD23N03RT4 is a single-gate type of FET. It is classified as a metallized silicoaluminophosphorite (MSA) FET, meaning it is constructed using a layer of aluminum deposited on a base of silicon and silicon dioxide. This layer is then further integrated with a layer of low pressure nitrogen. Due to its compact size, the NTD23N03RT4 is typically used in applications where a small physical footprint is desired, such as in mobile phones, laptops, and other mobile devices.The NTD23N03RT4 is a unipolar type of FET, meaning it does not contain an internal junction connecting a p-type and n-type source and drain region. Instead, it depends on a single source and drain connection. This single-gate FET architecture gives it a number of advantages, such as lower errors in signal transmission, lower signal distortion, and better thermal insulation. Additionally, it offers extremely high input impedance, making it very well suited for high frequency applications.The NTD23N03RT4 operates on the principle of field effect. This refers to how the device operates using the electric field created by the gate and its environment to control current flow to the channel between the source and drain. When voltage is applied to the gate, a field develops between the gate and the channel that modulates between the two. When the gate voltage is increased, the field increases, causing the channel to narrow and reducing current flow. Conversely, when the gate voltage is reduced, the field is weakened, allowing current to flow freely between the source and drain.The NTD23N03RT4 is used in a variety of applications, including power amplifiers, relay controls, and high frequency oscillators. It is a popular choice for high power audio amplifiers, due to its high input impedance and low distortion characteristics. Additionally, it is well suited for motor control and bidirectional switching circuits due its low on-resistance. It is also used in high frequency applications, such as switching mode power supplies and RF antennas.In conclusion, the NTD23N03RT4 is a compact, single-gate FET that is used in a wide range of applications, primarily for its high input impedance, low distortion characteristics, and low on-resistance. It operates on the principle of field effect, in which the electric field created by the gate and its environment modulates current flow between the source and drain. This versatile device can be used in a number of different applications, from power amplifiers and relay controls to high frequency oscillators and switching mode power supplies. Its combination of features make it a popular choice for those involved in design and development of electronic circuits.

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