NTD20P06LG Allicdata Electronics
Allicdata Part #:

NTD20P06LGOS-ND

Manufacturer Part#:

NTD20P06LG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 60V 15.5A DPAK
More Detail: P-Channel 60V 15.5A (Ta) 65W (Tc) Surface Mount DP...
DataSheet: NTD20P06LG datasheetNTD20P06LG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 65W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 150 mOhm @ 7.5A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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NTD20P06LG is a single field-effect transistor (FET), a type of semiconductor device that controls current or electric charge and can amplify a signal. This particular FET belongs to the N Channel logic level enhancement type family, and offers higher voltage and current capability in accordance with its logic level requirements.

This FET is widely preferred since it offers low on-resistance performance, as well as fast switching capability, making it an excellent choice for a wide range of applications. It is typically used in power converters and motor control circuits, power management systems, switching regulators, and power supply designs.

The NTD20P06LG provides a gate to source voltage rating of 30V and a drain to source voltage rating of 30V. It also has a current rating of 136A at 25C, 12A at 175C, and 8A at 225C, as well as an on-resistance of 7mΩ at 5V. It is designed to provide up to 1.5A self-limited current in conventional circuits and up to 4A peak current when used with advanced circuits.

The FET is operated by various rules and principles. In a FET, the electric current flowing across its channel is controlled by an electromagnetic field that is generated by a voltage at the gate. The voltage is applied to the gate-source junction, creating an electric field across the channel, which in turn controls the current flow.

Moreover, this FET follows two working modes: enhancement and depletion. In enhancement mode, the current flow is increased as the voltage is increased, while in depletion mode, the reverse occurs.

When using the NTD20P06LG, it is essential to ensure that it is properly heatsunk, as its power dissipation can be quite high. It is also important to consider its total power requirements before making a purchase.

In conclusion, the NTD20P06LG is a widely used single FET, offering high voltage and current capability, low on-resistance performance, and fast switching capability, making it ideal for a wide range of applications. It is operated based on the principles of an electromagnetic field, and requires proper heatsinking to meet its total power requirements.

The specific data is subject to PDF, and the above content is for reference

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