NTD2955T4G Discrete Semiconductor Products |
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| Allicdata Part #: | NTD2955T4GOSTR-ND |
| Manufacturer Part#: |
NTD2955T4G |
| Price: | $ 0.34 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 60V 12A DPAK |
| More Detail: | P-Channel 60V 12A (Ta) 55W (Tj) Surface Mount DPAK |
| DataSheet: |  NTD2955T4G Datasheet/PDF |
| Quantity: | 5000 |
| 1 +: | $ 0.34400 |
| 10 +: | $ 0.33368 |
| 100 +: | $ 0.32680 |
| 1000 +: | $ 0.31992 |
| 10000 +: | $ 0.30960 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 55W (Tj) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 180 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The NTD2955T4G is a type of FET (Field Effect Transistor) and is a single MOSFET (Metal Oxide Semiconductor Field Effect Transistor). An FET is a type of transistor with three terminals and is distinguished from other transistors by the control of the flow of electrons in the channels. The FET is a voltage-controlled device while the other type of transistors are known as current-controlled devices.The NTD2955T4G is an enhancement-mode MOSFET and is used in many switching and linear current-flow applications. It is designed to withstand high power and voltage, making it suitable for a variety of used in amplifier, switching and regulator circuits. It is highly sensitive to electrostatic charges and must be handled carefully.The NTD2955T4G is used in many applications, including motor control, power management, motor speed control, variable power supplies, battery chargers, and audio amplifiers. It is also used in unregulated power supplies and systems where fast switching and low power consumption are important.When used in variable-voltage supplies, the NTD2955T4G helps to regulate the voltage output. It also helps to protect the system from power surges, protects the system from overloading, and helps to reduce the risk of fire and other hazards in the system.The working principle of the NTD2955T4G involves the application of a small voltage to the gate of the transistor. When that voltage is increased, it increases the resistance in the source-drain channel of the transistor. The increase in the resistance reduces the current that flows through the transistor, resulting in a decrease in power consumption. This decrease in power consumption increases the efficiency of the system.The NTD2955T4G has the capability to prevent undesired switching and thermal runaway. It is also able to protect against EMI (electromagnetic interference). The NTD2955T4G is a power efficient and safe device that can fulfill many of the requirements for designing control circuits.When using the NTD2955T4G, it is important to understand the electrical characteristics of the device and how it will affect the system. It is important to use the correct protective devices to ensure that the system stays safe in the event of a power surge. Additionally, it is important to use the proper gate drive to take full advantage of the gate voltage and reduce current consumption.In conclusion, the NTD2955T4G is a versatile MOSFET that can be used in various current-flow applications. It is used in many fields, such as motor control, power management, switching and regulator circuits. It is important to understand the characteristics of this device before using it in any system. Additionally, the proper protecting devices should also be used when using the NTD2955T4G in order to ensure the system’s safety.
The specific data is subject to PDF, and the above content is for reference
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