
Allicdata Part #: | NTD20N06L-1G-ND |
Manufacturer Part#: |
NTD20N06L-1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 20A IPAK |
More Detail: | N-Channel 60V 20A (Ta) 1.36W (Ta), 60W (Tj) Throug... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.36W (Ta), 60W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 990pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 48 mOhm @ 10A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTD20N06L-1G is a single-level FET that is specially designed to fit a wide range of applications. It is a power MOSFET featuring a 20A current capacity and an RDS(on) of 1.1Ω. It is a versatile power FET that can be used in many different types of circuits, including battery powered devices, motor drives, and solenoid controllers. In this article, we will discuss the application fields and working principle of this powerful device.
Application Field
The NTD20N06L-1G has a wide range of applications. It is suitable for use as an amplification element in audio amplifiers, as a switching device in power supply circuits, and as a power FET in motor drive circuits. Additionally, the device can be used in low-voltage power circuits, such as solenoid control circuits. Furthermore, the device is also suitable for use in high- and medium-power applications, such as DC-DC converters, invertors, and switched-mode power supplies.
The FET’s small size, low on-resistance, and fast switching speed make it suitable for a variety of high-speed applications. With its high current handling capability and low resistance, the NTD20N06L-1G is ideal for applications which require continuous current. Additionally, the device’s low-voltage design makes it suitable for Battery Powered applications, such as remote control toys and other mobile devices.
Working Principle
A FET is a type of transistor that relies on an electric field to control the current flowing through it. It is similar to a conventional bipolar junction transistor (BJT), but with the added advantage of being more efficient and flexible. In a FET, the source and drain terminals are connected to a channel of either n-type or p-type material. This channel is controlled by a voltage applied to the gate terminal. When a voltage is applied to the gate, electrons flow from the source to the drain, allowing current to flow through the circuit.
When the gate voltage is low, the FET is in the “OFF” state, and no current can flow through the channel. When the gate voltage is raised above the threshold voltage, the FET is in the “ON” state, and current can flow through its channel. This allows the FET to be used as a switch or an amplifier, depending on the type of circuit in which it is used.
The NTD20N06L-1G is an enhancement-mode MOSFET, which means it is always in the “OFF” state until the gate voltage is raised above the threshold voltage. It is unique in that it combines high current handling capability with low on-resistance, which makes it suitable for a wide range of applications. Additionally, its small size and low voltage design make it suitable for battery powered applications.
Conclusion
The NTD20N06L-1G is a versatile power FET that can be used in a wide range of applications. It has a 20A current capacity and an RDS(on) of 1.1Ω, making it suitable for high- and medium-power applications. It is also suitable for low-voltage applications, such as battery powered devices. Its small size and fast switching speed make it suitable for high-speed applications, such as audio amplifiers and solenoid control circuits. Finally, its enhancement-mode MOSFET design makes it an ideal choice for use in power supply circuits.
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