Allicdata Part #: | NTD20N03L27GOS-ND |
Manufacturer Part#: |
NTD20N03L27G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 20A DPAK |
More Detail: | N-Channel 30V 20A (Ta) 1.75W (Ta), 74W (Tc) Surfac... |
DataSheet: | NTD20N03L27G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.75W (Ta), 74W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1260pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18.9nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 10A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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:NTD20N03L27G is a single N-Channel enhancement-mode Field Effect Transistor (FET). This particular product is part of a series of MOSFETs manufactured by ON Semiconductor and is a 3 A, 27 V device. The key features of this product include its wide range of operating temperatures, fast switching speeds, up to a 100 kHz frequency, and efficient power management thanks to its low on-state resistance. In terms of having a fast response, the NTD20N03L27G is capable of reaching turn-on times of 0.01 us.
The NTD20N03L27G is widely used in various applications, with the most common being power management. It can also be used as an amplifier in industrial systems as well as for high-end audio applications. The NTD20N03L27G is also widely used in motor control applications where its fast response time helps to maintain consistent running. In terms of digital switching, the NTD20N03L27G is capable of providing high-speed digital switching with limited power dissipation and low on-state resistance.
Working principle of the NTD20N03L27G is based on the principle of a field-effect transistor, also known as a FET. The FET is a four terminal device consisting of two terminals, the Gate and the Drain, which are connected to a semiconductor material such as silicon or germanium. The gate terminal is held at a fixed potential, while the drain terminal voltage is modulated in order to control the current flow. This current flow is controlled by an electric field created between the gate and the drain. The electric field flows from the gate to the drain, thereby controlling the current flow through the device. This makes the FET an ideal device for power management.
In order to facilitate fast switching, the drain to source capacitance of the NTD20N03L27G should be kept low. This can be done by keeping the gate and source components as close as possible. For high-speed digital switching, it is also important to keep the on-state resistance low. This helps to make digital signal transitions more efficient, allowing more current to flow faster with less power dissipated. The NTD20N03L27G has an on-state resistance of 0.02 ohms which makes it a great choice for digital signal switching.
The fast response times of the NTD20N03L27G are another great feature. The turn-on time for this device is 0.01 us and it can operate up to a frequency of 100kHz. This makes the NTD20N03L27G a great choice for applications requiring high-speed response times such as motor control or audio applications. In addition, the NTD20N03L27G can operate in a wide range of temperatures, from -55°C to +150°C, making it suitable for use in a variety of environments.
Overall, the NTD20N03L27G is a versatile and reliable single N-Channel FET that boasts a wide range of features, including fast switching speeds, low on-state resistance and wide operating temperature range. It is a popular choice for power management and digital signal switching applications, and is also suitable for audio and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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