NTD20N06-1G Allicdata Electronics
Allicdata Part #:

NTD20N06-1G-ND

Manufacturer Part#:

NTD20N06-1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 20A IPAK
More Detail: N-Channel 60V 20A (Ta) 1.88W (Ta), 60W (Tj) Throug...
DataSheet: NTD20N06-1G datasheetNTD20N06-1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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NTD20N06-1G is a field-effect transistor (FET) of the metal-oxide semiconductor type (MOSFET), designed for use in applications such as power regulation and switching.

What is a field effect transistor?

A field effect transistor, or FET, is a type of transistor, which is a semiconductor device used to amplify and switch electric signals. FETs are made up of a source, drain, and gate, in which the current flow between the source and the drain is controlled by the voltage applied to the gate. In contrast to other transistors, FETs are operated in a way where the gate electrode is capacitively coupled to the channel of the transistor, allowing the gate voltage to control the “on” and “off” state of the transistor.

What is an NTD20N06-1G?

The NTD20N06-1G is a P-channel MOSFET, or PMOS, transistor that can switch up to 60 volts. It is a MOSFET with a P-type electrical channel and is also known as an enhancement type MOSFET, as in its off state the gate has no effect on the channel and there is no current flow. When a negative voltage is applied to the gate, the channel is “opened up”, allowing the current to flow between the source and drain.The NTD20N06-1G features an electrical/inrush current of 600 amperes, an Idss of 7 amperes, and an Rds(on) of 17 milliohms. It has a maximum operating temperature of 150°C and an average on-state resistance of 0.017 ohm. It can also operate with positive voltages up to 20 volts.

Uses of the NTD20N06-1G

The NTD20N06-1G is typically used in applications such as power supply regulation, switching and power MOSFETs, and relay control. It is often used as a replacement for other similar transistors, as it is priced competitively and offers good performance. It can also be used in applications such as motor controllers, DC/DC converters, transducer interface amplifiers, and logic level automation and control. It is also commonly used for gate turn-on and logic level switching. The NTD20N06-1G is also used in applications that require high power and high-speed switching. It can be used in power supplies, DC-DC converters, and motor controllers. It is also often used in high-frequency switching circuits, such as those used in switching power supplies.

Conclusion

The NTD20N06-1G is a P-channel MOSFET transistor that can handle up to 60 volts and is designed for use in applications such as power regulation, switching and power MOSFETs, and relay control. It is often used as a replacement for other similar transistors, as it is priced competitively and offers good performance. It can handle high power and high-speed switching, and is commonly used in power supplies, DC-DC converters and motor controllers.

The specific data is subject to PDF, and the above content is for reference

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