NTD24N06-1G

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The NTD24N06-1G is a general purpose, single high-performance, N-channel MOSFET from ON Semiconductor. The NTD24N06-1G is a power MOSFET and has a low on-resistance of 0.24 ohm. The NTD24N06-1G MOSFET features N and P channel enhancement mode, making it ideal for a wide variety of applications and system designs.

Application Fields

The NTD24N06-1G MOSFET can be used in a wide variety of applications, in both consumer and industrial sectors. Its low on-resistance makes it ideally suited for high-efficiency and high-performance systems, such as motor drives, power conversion, and DC-DC converters. It can also be used in power grids and energy storage systems. Additionally, this MOSFET is especially useful for light loads and low-power applications such as in white goods, home automation systems, and electrical control systems.

Working Principle

The NTD24N06-1G MOSFET is an N-channel enhancement mode power field-effect transistor (FET). It is based on a vertical structure, where an N-type substrate is used to form the drain and source terminals, and a metal oxide semiconductor (MOS) is used to form the gate terminal. The drain and source terminals are typically connected to a metal plate that is the base of the device. The MOS region is the key element of the FET, as it controls the field-effect that is used to control the transistor\'s operating characteristics.

The NTD24N06-1G MOSFET\'s operation is determined by the applied gate voltage. When a low voltage is applied to its gate terminal, it creates an electric field that attracts mobile electrons from the bulk N-type substrate into the gate region. This creates a large electric current between the drain and source. When a higher voltage is applied to the gate, the electric field is changed and fewer electrons are attracted from the bulk, leading to a lower current between the drain and source. As such, the gate voltage applied to the device controls the conductance between the drain and source.

In addition to the applied gate voltage, the NTD24N06-1G MOSFET\'s performance is also dependent on its physical parameters, such as its drain-source resistance and gate-source capacitance. The drain-source resistance, also known as “on-resistance”, is an important parameter, as it describes the device\'s maximum operating current. The gate-source capacitance describes the time needed for the device to turn on and off. The NTD24N06-1G MOSFET has a low on-resistance of 0.24 ohm and a low gate-source capacitance, making it highly suitable for high-performance, high-efficiency applications.

In summary, the NTD24N06-1G is a single high-performance, N-channel MOSFET from ON Semiconductor. This device is ideal for a wide variety of applications and system designs, such as motor drives, power conversion, DC-DC converters, light loads, and low-power applications. This power MOSFET features an N-channel enhancement mode and a low on-resistance of 0.24 ohm which makes it highly suitable for high-performance and high-efficiency systems.

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