NTD25P03LG Allicdata Electronics
Allicdata Part #:

NTD25P03LGOS-ND

Manufacturer Part#:

NTD25P03LG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 30V 25A DPAK
More Detail: P-Channel 30V 25A (Ta) 75W (Tj) Surface Mount DPAK
DataSheet: NTD25P03LG datasheetNTD25P03LG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 75W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 80 mOhm @ 25A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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NTD25P03LG is a low-voltage N-channel MOSFET. It operates at a voltage of 3.3V and has a maximum drain current of 2.5A. The device is available in SOT-23, TO-220, and a variety of other packages. It is suitable for applications such as DC-DC converters, load switching, and low voltage power amplification.

Field of Application

NTD25P03LG is a low-voltage N-channel MOSFET that is used for various low voltage applications. It is especially suited for DC-DC step-down converters, load switch design, power amplifiers, and level shifting circuits. The device is available in SOT-23, TO-220, and other packages. Its low saturation voltage, high current carrying capacity and low on-resistance makes it suitable for use in low voltage power supplies.

Working Principle

The NTD25P03LG is a N-channel enhancement type MOSFET. It consists of a channel region formed between the source and the drain terminals, which is further surrounded by a gate electrode. The channel can be of either N-type or P-type material, depending on the type of MOSFET. When a voltage is applied to the gate terminal, a channel forms between source and drain and allows current to flow through it. As the voltage at the gate increases, the channel becomes wider and more current can flow through it.

When used as a switching device, the NTD25P03LG can be used to control the on/off state of a load. If the voltage at the gate is high enough, the channel forms and the MOSFET switches on, allowing current to flow through the load. If the gate voltage is low, the MOSFET switches off, blocking current flow through the load.

The NTD25P03LG can also be used as an amplifier. By applying an input signal to the gate, the MOSFET acts like a voltage controlled resistor, modulating the pass of current between the drain and the source. This regulated current can be used as an amplifier in a variety of applications, such as audio amplifiers, power amplifiers, and motor control systems.

The NTD25P03LG is a versatile and reliable device. By using it in various low voltage applications, designers can reduce system power consumption, reduce the required circuit complexity, and increase system efficiency.

The specific data is subject to PDF, and the above content is for reference

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