NTD25P03L1G

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	75W (Tj)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1260pF @ 25V
Vgs (Max):	±15V
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	80 mOhm @ 25A, 5V
Drive Voltage (Max Rds On, Min Rds On):	4V, 5V
Current - Continuous Drain (Id) @ 25°C:	25A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tube

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NTD25P03L1G Application Field and Working Principle

The NTD25P03L1G power performance MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a high efficiency device with improved breakdown voltage, allowing it to be used in high power and voltage applications. This MOSFET is suitable for use in surface mount applications such as motor drives, industrial control systems, communications systems, automotive and automotive circuits.

Operating Characteristics

The NTD25P03L1G offers an enhanced RDS (ON) to reduce power dissipation, enhanced gate threshold for low gate drive requirements, low drain-source on-state and gate charge for improved operating efficiency. In addition, its high temperature operating capability allows for applications in high-temperature environments. The device also features improved avalanche energy capability for increased safety in high current applications.

MOSFET Structure

The NTD25P03L1G features a planar, passivated double-diffused MOSFET (D-MOSFET) structure. The device utilizes an insulated gate structure, which protects the gate against voltage, mechanical and thermal shock. The insulation layer also ensures a higher breakdown voltage and a more robust temperature performance.

Working Principle

The NTD25P03L1G operates according to the principle of the MOSFET. This involves controlling the flow of current between the source and drain, selectively allowing current to pass depending on the gate potential. A voltage applied to the gate forms an electric field, attracting electrons to the gate and creating a region of negatively-charged electrons, known as a depletion layer. This layer rests between the source and drain, and acts as an electrical barrier between the two regions.The ability to control current flow by changing the gate voltage makes MOSFETs versatile and controllable semiconductor switches. Depending on the applied gate voltage, the NTD25P03L1G can operate in three different modes. These are: ohmic (linear) operation, in which the drain current is directly proportional to the gate voltage; saturation (or cutoff) operation, where the drain current is nearly zero; and sub-threshold operation, which involves a low current flow through the device.

Applications

The NTD25P03L1G is suitable for a wide range of applications, including motor drives, industrial control systems, communications systems and automotive circuits. Its high temperature operating capability makes it suitable for use in harsh environments, while its improved breakdown voltage provides protection in high power and voltage applications. Other application areas include switching supplies, power tools and direct drives.

Conclusion

The NTD25P03L1G power MOSFET is a high efficiency device, ideal for a wide range of applications. It features improved breakdown voltage, low gate drive requirements, improved avalanche energy capability and high temperature operating capability. This makes it suitable for use in motor drives, industrial control systems, communications systems, automotive circuits and switching supplies, among others.

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