NTD23N03RG Allicdata Electronics
Allicdata Part #:

NTD23N03RG-ND

Manufacturer Part#:

NTD23N03RG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 25V 3.8A DPAK
More Detail: N-Channel 25V 3.8A (Ta), 17.1A (Tc) 1.14W (Ta), 22...
DataSheet: NTD23N03RG datasheetNTD23N03RG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.14W (Ta), 22.3W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 3.76nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 17.1A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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Introduction

The NTD23N03RG is a N-channel MOSFET. It belongs to the medium Vds, low Rds(on) type. This type of MOSFETs are mostly popular for circuitries like switches, portable tools and instruments, and also used as amplifiers and power converters.

Application Fields

The NTD23N03RG can be used in the following application fields:

  1. Switch - NTD23N03RG can be used as a switch with its 100V drain to source voltage and the low off-state leakage current (Dss).
  2. Power supply – This MOSFET can be used to construct an isolated power supply circuit, or a voltage regulator.
  3. PCB board – NTD23N03RG can be used to mount on PCB boards easily.
  4. Power amplifier – This MOSFET can be used to make a high efficiency power amplifier.
  5. Automotive – This MOSFET can also be used in automotive applications like power management and lighting control.
  6. Power inverter – It can also be used to construct an isolated power inverter.

NTD23N03RG Working Principle

In brief, the NTD23N03RG works by controlling the flow of current between the drain and the source. It is driven by an input voltage that is applied between the gate and the source. The voltage applied between the gate and the source controls the drain current, i.e., the more the voltage between the gate and the source, the more the drain current. When the voltage applied between the gate and the source is decreased, the number of electrons moving from the source to the drain decreases, thus decreasing the drain current. The drain current is usually expressed in A (amperes). The maximum drain current of NTD23N03RG is 10 A.

This MOSFET is also able to control the output voltage by controlling the load current. This is possible when the load is connected to the drain, the source is connected to the ground, and the gate is connected to an input voltage. When the input voltage is increased, the number of electrons moving from the source to the drain increases, thus increasing the load current. When the input voltage is decreased, the number of electrons moving from the source to the drain decreases, thus decreasing the load current. Thus, the output voltage can be regulated by controlling the load current.

Overall, the NTD23N03RG is a great choice for switching, power converters, amplifiers and other portable solutions, thanks to its 100V drain to source voltage and 10 A maximum drain current.

The specific data is subject to PDF, and the above content is for reference

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