NTHS5441T1G Discrete Semiconductor Products

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NTHS5441T1G is a single N-channel Trench-FET power MOSFET, designed and manufactured by ON Semiconductor. It is part of the family of N-channel enhancement mode power MOSFET devices. It is designed to be used with either a dual or single supply and provides optimal level shift and switching performance.

A Field-Effect Transistor, mosfet-FET, is a type of transistor used in integrated circuits. It is an active semiconductor device that is used as a switch or for amplification and other linear applications. FETs are voltage-controlled and are composed of multiple regions in a single electronic device. Each region has very different characteristics and is connected to different pins. Unlike other semiconductor devices, a FET does not require power to be applied to it to remain in its on-state. This allows them to consume much less power while still providing reliable, efficient operation.

The NTHS5441T1G is one such mosfet-FET, featuring an N-channel MOSFET, which is capable of switching up to 50V and 4A with low drain-source resistance (Rds(on)). It is built with a trench-gate structure for improved reliability, thermal resistance and switching performance. The device has a variety of features, including a low gate-source voltage (Vgs) of 2.5 volts, leading edge protection that prevents device damage from over stress due to high instantaneous voltage transients, and input capacitance (Ciss) of 37pF.

The NTHS5441T1G is ideal for a variety of applications and is suitable for use as a switch in a wide range of power supplies, DC-DC converters, and other power management applications. Its low Rds(on) provides power efficiency, while its thermal and ESD resistance gives it increased protection from external damage. The device can also be used in motor control applications, where it can be used as an ON/OFF switch and as an inverter to control the directional speed of the motor.

In terms of working principle, the NTHS5441T1G is a voltage-controlled device, meaning that its on and off states are determined by the voltage applied to its gate terminal. When a voltage greater than Vgs is applied to the gate terminal, current flows through the channel, turning on the device. When a voltage less than Vgs is applied to the gate terminal, the device is off, and no current will flow through it. The voltage applied to the gate terminal will determine how much current flows through the device, since the higher the voltage, the greater the current flow.

The NTHS5441T1G can be used in a variety of applications, due to its low Rds(on) and thermal and ESD resistance. It is capable of switching up to 50V and 4A with low Rds(on), making it a great choice for power supplies, DC-DC converters, and motor control applications. Its ability to remain in its on-state without requiring power, allows it to remain efficient while consuming less power. In addition, its trench-gate structure allows it to provide enhanced reliability, thermal resistance, and switching performance.

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