Allicdata Part #: | NTHS5445T1OS-ND |
Manufacturer Part#: |
NTHS5445T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 8V 5.2A CHIPFET |
More Detail: | P-Channel 8V 5.2A (Ta) 1.3W (Ta) Surface Mount Chi... |
DataSheet: | NTHS5445T1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 8V |
Current - Continuous Drain (Id) @ 25°C: | 5.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 5.2A, 4.5V |
Vgs(th) (Max) @ Id: | 450mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 4.5V |
Vgs (Max): | ±8V |
FET Feature: | -- |
Power Dissipation (Max): | 1.3W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | ChipFET™ |
Package / Case: | 8-SMD, Flat Lead |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NTHS5445T1 is a Fabless Semiconductor Company that designs, develops, manufactures and markets high-performance transistors and integrated circuits. The company specializes in the production of single field effect transistors and metal oxide semiconductors (MOSFETs). NTHS5445T1 devices are utilized in many applications and can be used to improve device efficiency and performance.
NTHS5445T1 offers single FETs that feature high voltage breakdown and relatively low gate capacitance. These devices are available with a variety of gate lengths and levels of subthreshold performance, providing users with a wide range of options for meeting their specific application needs. Applications for NTHS5445T1 FETs include automotive power systems, high power analog and telecom systems, industrial and consumer power supplies, insulated gate bipolar transistors (IGBTs), and switching diode- based circuits.
MOSFETs from NTHS5445T1 employ the latest technology in order to provide an extremely low on-resistance and very low gate-source capacitance. With an on-resistance that is typically less than 5 m Ω, these devices are particularly well suited for use in high current, high voltage switching applications. Examples of application areas for NTHS5445T1 MOSFETs include motor control applications, power supply and battery charger circuits, solar power inverters, and high current DC/DC converters.
The working principle of NTHS5445T1 devices is based on the principles of charged particles in a semiconductor material. In the case of FETs and MOSFETs, an electric field is used to control the flow of current between two terminals - the source and the drain. By changing the electric field, the amount of current flow can be precisely controlled. MOSFETs offer the additional benefit of an insulated gate, which allows for a very precise control of the current. By varying the voltage of the gate, the amount of current can be changed quickly and without having to adjust external voltage sources.
NTHS5445T1 FETs and MOSFETs are highly reliable, efficient, and cost effective devices that can be used in a wide variety of applications. By making use of the latest semiconductor technology, these devices are capable of delivering performance that is superior to traditional FETs and MOSFETs. The combination of high voltage breakdown and low gate capacitance make them particularly suitable for applications that require precise current control.
The specific data is subject to PDF, and the above content is for reference
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