NTHS5443T1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	65 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id:	600mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	12nC @ 4.5V
Vgs (Max):	±12V
FET Feature:	--
Power Dissipation (Max):	1.3W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	ChipFET™
Package / Case:	8-SMD, Flat Lead

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NTHS5443T1 Application Field and Working Principle

Transistors - FETs, MOSFETs - Single

The NTHS5443T1 is a high power MOSFET designed for applications requiring high current and/or high voltage operation. It is a single package device with a single n-channel depletion mode structure, and is ideal for automotive, motor control, and high power switching applications.

Features

The key features of the NTHS5443T1 are as follows:

• High current capability;
• High voltage operation;
• High gate-source breakdown voltage;
• Low on-state resistance;
• 60V drain-source voltage;
• 12V gate-source voltage;
• Compact single package design;
• Integrated thermal shutdown protection.

Application fields

The NTHS5443T1 is intended for use in applications such as DC-DC converters, relay drivers, high-power battery chargers, and motor control. Due to its high current capacity and high voltage operation, the NTHS5443T1 is an ideal choice for applications that require high efficiency and reliability.

Working principle

The NTHS5443T1 is a depletion mode MOSFET which operates by creating a conductive pathway between its source and drain terminals when a voltage is applied to its gate terminal. This voltage, known as the gate-source voltage, causes electrons to tunnel from the source to the drain, creating a conductive channel and allowing current to flow. The current that can be passed through the device is determined by its internal resistance and the applied gate-source voltage. When the gate-source voltage is increased, the device\'s internal resistance decreases, allowing greater current to flow. In addition to providing a route for current conduction, the NTHS5443T1 also has a built-in thermal shutdown feature. This feature ensures that the device will automatically shutdown if its temperature exceeds a pre-set threshold. This helps to ensure the device\'s long-term reliability and extend its service life. The NTHS5443T1 is a highly reliable, high power MOSFET which is well suited for a wide range of applications. Its high current and high voltage operation, coupled with its low on-state resistance, make it ideal for applications requiring high efficiency and reliability. Additionally, its built-in thermal shutdown feature provides additional protection and peace of mind.

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