NTMD4820NR2G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Base Part Number:	NTMD4820N
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	750mW
Input Capacitance (Ciss) (Max) @ Vds:	940pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:	7.7nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	20 mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C:	4.9A
Drain to Source Voltage (Vdss):	30V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NTMD4820NR2G Application Field and Working Principle

NTMD4820NR2G is a 2.2 V MOSFET array designed for general purpose applications. It is designed to be a cost-effective replacement of two discrete MOSFETs, with higher efficiency, enhanced electrical performance and a lower profile.The NTMD4820NR2G is a three-pin device formed of two N-Channel (FET) or P-Channel (P-FET) MOSFETs. It has a single gate to control both FETs, making it suitable for small-signal applications where a single control point is adequate. The device features low on-resistance, low gate charge, and low input and output capacitance.

Application Field

The NTMD4820NR2G can be employed in a variety of general purpose applications, such as in switching and amplifier circuits, sound and video applications, Bluetooth and Wi-Fi transceivers, automotive audio amplifiers, and industrial motor controls.The device can also be used for switching high-side loads such as battery management systems, automotive backlighting, and in various home appliance applications.

Working Principle

The NTMD4820NR2G operates on two different principles depending on the mode of operation. In the first mode, the gate is left floating and only the two power sources (Vdd and Vss) are used. In this configuration, when the MOSFETs are turned on (DI=H), the source terminal is connected to the source of the power source, and when the MOSFETs are turned off (DI=L), the drain terminal is connected to the source of the power source. In the other mode, the gate is driven with a voltage input. The voltage at the gate is compared to the voltage at the source terminal. If the gate is higher than the source, the MOSFET is turned on and current flows from the drain to the source. If the gate voltage is lower than the source, the MOSFET is turned off and current cannot flow. This allows more flexibility in terms of controlling the MOSFETs and allows the device to operate as a switch, an amplifier, or a combiner circuit.

Conclusion

The NTMD4820NR2G is a two MOSFET array designed for general purpose applications. Its main advantages are lower on-resistance, lower gate charge and lower input and output capacitance. It can be used for both switching and amplifier circuits and for various home applications. The device operates on two different principles, depending on whether the gate is left floating or driven with a voltage.

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