Allicdata Part #: | NTMD6N03R2OS-ND |
Manufacturer Part#: |
NTMD6N03R2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 30V 6A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 6A 1.29W Surfa... |
DataSheet: | NTMD6N03R2 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Base Part Number: | NTMD6N03 |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.29W |
Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 24V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 32 mOhm @ 6A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTMD6N03R2 Application Field and Working Principle
The NTMD6N03R2 is a dual N-channel trench MOSFET array designed to provide sealed power switching solutions in power MOSFET applications. The device features low RDS(on) to minimize conduction losses and maximize efficiency, as well as extremely fast switching times and low input capacitance. The NTMD6N03R2 is widely used in industrial and commercial applications, such as lighting dimmers, switching power supplies, air conditioners, and motor controls.
Features of the NTMD6N03R2
- Low RDS(on) for minimum conduction losses
- Sealed package providing increased reliability
- Low input capacitance for fast switching speeds
- High operating temperature range
Working Principle
The NTMD6N03R2 is a dual N-channel trench MOSFET array, which means it consists of two independent N-channel MOSFETs. In a MOSFET, the source is connected to the negative source voltage, and the drain is connected to the positive voltage. When a voltage is applied between the gate and source terminal, it creates a vertical electric field between them, which in turn induces a current between the source and the drain, known as the MOSFET’s drain current.
The MOSFET’s drain current is proportional to the voltage applied between the gate and source terminal, and is known as the MOSFET’s drain current. This current can be controlled by varying the voltage applied between the gate and source terminal, thereby allowing for precise control of the power delivered to the load. This makes the MOSFET well-suited for use in power switching applications, where high efficiency and fast switching times are required.
Applications of the NTMD6N03R2
The NTMD6N03R2 is an ideal solution for power switching applications, such as motor controls, lighting dimmers, air conditioners, and switching power supplies. Its fast switching speed, low input capacitance, and low RDS(on) make it an excellent choice for these types of applications, where high efficiency and low power loss are paramount.
In addition to its use in power switching applications, the NTMD6N03R2 can also be used in other applications where fast switching time and low power consumption are desired. These applications include analog to digital converters, video amplifiers, radio frequency amplifiers, as well as audio and telecommunications devices.
Conclusion
The NTMD6N03R2 is an ideal solution for power switching applications, such as motor controls, lighting dimmers, air conditioners, and switching power supplies. Its fast switching speed, low input capacitance, and low RDS(on) make it an excellent choice for these types of applications, where high efficiency and low power loss are paramount. The NTMD6N03R2 is also suitable for use in other applications where fast switching times and low power consumption are desired, such as analog to digital converters, video amplifiers, radio frequency amplifiers, and audio and telecommunications devices.
The specific data is subject to PDF, and the above content is for reference
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