NTMD5838NLR2G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	7.4A
Rds On (Max) @ Id, Vgs:	25 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	785pF @ 20V
Power - Max:	2.1W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC

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NTMD5838NLR2G Application Field and Working PrincipleIntroductionThe NTMD5838NLR2G are radiation hardened, monolithic, high power, N-channel MOSFET arrays. It can be used in various applications such as power supply, motor control, and communications. It is a reliable power device with wide range of operating temperature ranges. The device includes four MOSFET channels with low RDS(on) characteristics. The device is capable of a continuous drain current of 40A, and therefore providing an alternate to discrete MOSFETs in many applications.Functional CharacteristicsThe device features both low on-state drain-source resistance (RDS(on)) and low threshold voltage (V th ) which make it suitable for various power supply related applications. It offers improved power efficiency than other transistor solution due to its enhanced conductivity. Furthermore, it has a temperature range of -55°C to 175°C which makes it a dependable device in harsh temperature environments. The device is also capable of withstanding radiation up to 200Krad (Si); thereby, making it a feasible solution for space related requirements.Key FeaturesSome of the key features of the NTMD5838NLR2G are:• Wide range of operating temperatures (up to 175°C)• High continuous drain current of 40A• Low RDS(on) of 18mΩ (TW = 25°C)• Company’s proprietary Radiation Hardening• High voltage thresholds of 16V/7V• Wide range of operating voltages of 8V to 18VPrinciple Of OperationThe NTMD5838NLR2G is a power MOSFET array consisting of four N-channel MOSFETs. It is designed to have a low gate to source threshold voltage so that it can be used in power converters and other applications. The gate of the MOSFET array can be driven with an external signal. When a signal is applied to the gate electrode, electrons flow through the channel and through the drain contact. The conduction of electrons is controlled by the voltage at the gate. The lower the voltage at the gate, the higher conductivity through the channel, and the higher the current.ApplicationsThe NTMD5838NLR2G is an ideal device for various power-related applications. Some of the applications include:• DC-DC power converters• Motor control• Low-side switches• High-side switches• Motor driven loads• RF and microwave switching• Power supply for LED drivers• Gate drivers for H-bridge and other bridge configurations• Battery management systemConclusionThe NTMD5838NLR2G is an ideal device for various applications where temperature and high voltage requirements are critical. The device offers an improved power efficiency and high continuous drain current of 40A owing to its low RDS(on) characteristics. The device is also capable of withstanding radiation up to 200Krad (Si); thereby, making it a feasible solution for space related requirements. This MOSFET array is suitable for a variety of applications such as motor control, high-side switches and low-side switches, power supply, and battery management system.

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