Allicdata Part #: | NTMD4884NFR2G-ND |
Manufacturer Part#: |
NTMD4884NFR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 3.3A 8-SOIC |
More Detail: | N-Channel 30V 3.3A (Ta) 770mW (Ta) Surface Mount 8... |
DataSheet: | NTMD4884NFR2G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 770mW (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 360pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 4.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 48 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.3A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTMD4884NFR2G is a vertical Power MOSFET suitable for various industrial and consumer applications that require high levels of efficiency. This transistor is manufactured by Nitronex on their own Power 0.25μm “N-Series” Process, and has a maximum drain-source voltage of 45V with a maximum drain current of 8.4A. The Power MOSFET is capable of switching high-power loads quickly with an on-state resistance of 25mΩ RDSON.
Applications
Power MOSFETs like the NTMD4884NFR2G are often used in applications such as switching high capacitor loads, high current loads, and high voltage loads. The NTMD4884NFR2G can also be used in power switching applications where low on-resistance and high speed are required, such as in automotive, consumer, LED lighting, and industrial applications. The Power MOSFET is also ideal for use in DC motor control, AC motor drive, and power supply regulation.
Working Principle
A Power MOSFET operates by controlling the flow of electrons between its drain and source terminals. The voltage applied to the gate terminal determines whether or not the Power MOSFET is turned on or off. When the gate voltage is increased, electrons are attracted to the gate and the MOSFET becomes increasingly conductive. As the applied voltage reaches a certain threshold voltage, the electrons create an electric field at the drain-source region, and the MOSFET turns on.
The Power MOSFET can also be operated in linear mode. In this mode of operation, the gate voltage controls the drain current. As the gate voltage increases, the drain current increases, and as the gate voltage decreases, the drain current decreases. In this way, the NTMD4884NFR2G can be used in applications such as DC motor control and AC motor drive.
The NTMD4884NFR2G has a wide variety of applications due to its high efficiency, low on-resistance, and high speed of operation. It is ideal for use in high power processes where low on-state resistance and high speed are desired, such as in power switching applications. The Power MOSFET also operates in linear mode, allowing for use in applications such as DC motor control and AC motor drive.
The specific data is subject to PDF, and the above content is for reference
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