NTMD6N03R2G Allicdata Electronics

NTMD6N03R2G Discrete Semiconductor Products

Allicdata Part #:

NTMD6N03R2GOSTR-ND

Manufacturer Part#:

NTMD6N03R2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 30V 6A 8SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 6A 1.29W Surfa...
DataSheet: NTMD6N03R2G datasheetNTMD6N03R2G Datasheet/PDF
Quantity: 2500
Stock 2500Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Base Part Number: NTMD6N03
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.29W
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NTMD6N03R2G is an N-channel enhancement mode Power MOSFET array composed of three independent, N-channel Power MOSFETs with the same gate source voltage (VGS) rating. It is a reliable, low-cost and small-sized chip, which is widely used in many applications. In this article, we will look at some of the applications and working principle of the NTMD6N03R2G.

Application Field

NTMD6N03R2G chips are extensively used in many fields, including energy, healthcare, automotive and industrial automation. In energy ares, the NTMD6N03R2G can be used in renewable energy systems such as solar and wind systems where the power requirements are relatively low and the efficiency of the system is key. In healthcare and medical equipment, the chip can be used in low power control systems. For automotive applications, the NTMD6N03R2G is used in battery management and powertrain control systems for improved efficiency, reliability and accuracy. For industrial automation, the chip is commonly found in microcontrollers, actuators and sensors, as well as high power systems.

Working Principle

The NTMD6N03R2G is an N-channel MOSFET array, which consists of three independent N-channel enhancement mode Power MOSFETs with the same gate source voltage (VGS) rating. Each of the MOSFETs has a different drain-source voltage (VDS) rating, ranging from 30V to 45V. The gate voltage (VGS) is used to control the current passing through the MOSFETs. When the gate voltage is raised, the current through the MOSFETs is increased, and when the gate voltage is lowered, the current decreases.

Another important factor for controlling the current is the gate-source capacitance. The higher the gate-source capacitance, the larger the current that can be switched by the MOSFETs. The logic level of the gate voltage required to turn on the transistors is usually equal to the VGS rating of the devices. The MOSFETs in the NTMD6N03R2G chip have a high-speed switching capability, making them suitable for switching applications requiring fast switching times.

In addition, the NTMD6N03R2G can be used in either a common source or a common drain configuration. In a common source configuration, the input is applied to the source of the MOSFETs, and the output is taken from the drain. In a common drain configuration, the input is applied to the drain of the MOSFETs, and the output is taken from the source. In both configurations, the gate voltage is used to control the current through the MOSFETs.

Overall, the NTMD6N03R2G is a reliable, low-cost, and small-size chip, and it has wide applications in energy, healthcare, automotive, and industrial automation. Its high-speed switching capability and its independent MOSFETs with different drain-source voltages make it a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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