NTMD4184PFR2G Discrete Semiconductor Products

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NTMD4184PFR2G is a N-Channel MOSFET produced by ON Semiconductor and is widely used in electronic designs. It is a complimentary metal oxide semiconductor (CMOS) transistor technology manufactured in a Gallium Arsenide (GaAs) process. This technology provides a power device with a high breakdown voltage, a high switching speed and a low input capacitance.

The specific application field of the NTMD4184PFR2G is high frequency low power applications. It is suitable for a wide range of electronic applications such as switching power supplies, battery packs, and other switching applications. In particular, it is well suited for applications that require low power consumption and high reliability such as personal computers and peripheral devices.

The working principle behind the NTMD4184PFR2G is the same for all MOSFETs. When the gate to source voltage, VGS, is lower than the threshold voltage, VGS(th), the device is in the OFF state. The device is in the ON state when the gate voltage is higher than the threshold voltage. When the voltage is greater than VGS(th), the source and the drain channels become conductive. This conducts the source and drain current, Id, which is determined by the voltage over the gate and the source. The relationship between the VGS and the drain current is shown in Figure 1.

Figure 1 - Gate Source Voltage vs. Drain Current for the NTMD4184PFR2G

The NTMD4184PFR2G has a typical RDS(on) of 0.007 Ω. This is the resistance value between the drain and the source when the MOSFET is in the ON state. This determines the power losses when the device is in the ON state and can vary depending on the temperature and the operating conditions. The typical gate charge, Qg, is 3.2 nC. This is the charge that is needed to change the state of the device from the OFF to the ON state.

The NTMD4184PFR2G is well suited for digital switch applications. It is a fast switching device with a low "on" resistance and has low power losses. It is a simple device that can be used to switch DC loads such as lights and motors. It is also very useful for applications that require high frequency switching such as amplifier circuits. The device also has a low input capacitance and is therefore suitable for high frequency switching.

In addition to its low power losses and low capacitance, the NTMD4184PFR2G is also an efficient device. It has a high power dissipation of 75W. This ensures that it can deal with high current and voltage applications. It also has a high breakdown voltage of 40V which ensures that it can handle higher voltage applications.

The NTMD4184PFR2G is easily incorporated into electronic designs and provides design flexibility as it comes in different sizes that can be used to reduce the board space. It is a reliable device as it has a maximum junction temperature rating of 150oC. This ensures that it can handle operating temperature without any degradation in performance. The device also has a low parasitic drain to source capacitance which reduces any unwanted signal distortion and increases signal integrity.

To conclude, the NTMD4184PFR2G is a reliable and efficient N-channel MOSFET produced by ON Semiconductor. It is an ideal choice for high frequency low-power applications such as switching power supplies, battery packs, and other switching applications. It has a low "on" resistance, a low input capacitance, and a high power dissipation of 75W which ensures efficient usage in a wide range of applications. It also has a high breakdown voltage and a maximum junction temperature rating of 150oC which makes it suitable for use in high voltage and high temperature environments.

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