NTMD6P02R2G Discrete Semiconductor Products |
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Allicdata Part #: | NTMD6P02R2GOSTR-ND |
Manufacturer Part#: |
NTMD6P02R2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 20V 4.8A 8SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 4.8A 750mW Sur... |
DataSheet: | NTMD6P02R2G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Base Part Number: | NTMD6P02 |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 750mW |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 16V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 33 mOhm @ 6.2A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.8A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NTMD6P02R2G is a field-effect transistor array manufactured by Toshiba. It consists of 2 N-channel power MOSFETs arranged in a dual-gate configuration, allowing for higher ring that would otherwise be impossible with a single transistor. This makes it well-suited for applications that require higher output power, better heat dissipation, and greater robustness.
From an electrical standpoint, the NTMD6P02R2G is a 4-terminal device. Two gates are connected in parallel, creating two subunits that share a common source drain. A single voltage input is applied to the two gates which modulates the current flowing through the device. Since both the gates are connected in parallel, they form a single point of entry, which limits the amount of current drawn by the device.
The NTMD6P02R2G is mainly used in applications such as DC-DC converters, switching power supplies, and motor drivers. Its dual-gate configuration enables it to handle higher current and power levels compared to single power MOSFETs. It also offers improved efficiency, reduced heating, and improved safety by preventing short circuits.
The working principle of the NTMD6P02R2G is based on modulation of the current flowing through the device in response to the voltage applied at its gate. As the voltage is increased, the current through the source and drain increases, thus allowing more power to be delivered to the load. Conversely, if the voltage is decreased, the current through the source and drain is reduced, decreasing the power delivered to the load. The gate is able to control the current flowing through the device by virtue of the capacitance between the gate and the channel, which modulates the gate voltage based on the current flowing through the channel.
In conclusion, the NTMD6P02R2G is a powerful and robust dual-gate MOSFET array designed to handle demanding applications. It can provide higher output power, greater efficiency, and improved heat dissipation, all in a small package. Its working principle is relatively simple, with its gate controlling the current flowing through the device by virtue of the capacitance between the gate and the channel.
The specific data is subject to PDF, and the above content is for reference
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