| Allicdata Part #: | NTMD6N02R2OS-ND |
| Manufacturer Part#: |
NTMD6N02R2 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET 2N-CH 20V 3.92A 8SO |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 3.92A 730mW Su... |
| DataSheet: |  NTMD6N02R2 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
| Base Part Number: | NTMD6N02 |
| Supplier Device Package: | 8-SOIC |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power - Max: | 730mW |
| Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 16V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 35 mOhm @ 6A, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 3.92A |
| Drain to Source Voltage (Vdss): | 20V |
| FET Feature: | Logic Level Gate |
| FET Type: | 2 N-Channel (Dual) |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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NTMD6N02R2 is a dual N-channel Mosfet array built with two monolithic High Voltage DMOS FETs in a common source arrangement, specifically designed for advanced high voltage power applications. It has several distinct characteristics that make its use especially useful in a variety of situations. In this article, we will explore the application fields and working principle of the NTMD6N02R2.
Application Fields
The NTMD6N02R2 is specially designed for applications in the fields of power electronics, such as solar cells, battery analyzers, DC-DC converters and high voltage power converters. Its high voltage capability and low on-resistance make it particularly suitable for use in these applications, as it allows for higher current density and improved efficiency. The array also has excellent thermal performance and can be used in temperatures from -55 degrees Celsius to +150 degrees Celsius.Working Principle
The NTMD6N02R2 works on the principle of a dual N-channel MOSFET array. It consists of two individual high voltage DMOS FETs connected in a common source arrangement. This arrangement allows for the two FETs to work together to control the output voltage, current, and power.The NTMD6N02R2 array has different gate drive circuits, which allows it to be operated in both linear and switching mode power supplies. In basic terms, in linear mode the two FETs can be operated in parallel, allowing them to work together to control the output voltage and current. In switching mode, the FETs can be operated in series, creating an increase in output power. The NTMD6N02R2 also has the ability to be integrated into an application-specific integrated circuit (ASIC). This allows the NTMD6N02R2 to be used in applications that require a smaller size or customized outputs.Conclusion
The NTMD6N02R2 is an ideal choice for a variety of high voltage power applications. Its high voltage capability and low on-resistance make it an excellent choice for use in solar cells, battery analyzers, DC-DC converters and other power converters. It also has excellent thermal performance and can be used in temperatures from -55 degrees Celsius to +150 degrees Celsius. Furthermore, its ability to be integrated into an ASIC makes it an even more attractive choice.The specific data is subject to PDF, and the above content is for reference
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