NTMD4N03R2G Discrete Semiconductor Products |
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Allicdata Part #: | NTMD4N03R2GOSTR-ND |
Manufacturer Part#: |
NTMD4N03R2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 30V 4A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 4A 2W Surface ... |
DataSheet: | NTMD4N03R2G Datasheet/PDF |
Quantity: | 7500 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Base Part Number: | NTMD4N03 |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 4A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.NTMD4N03R2G Application Field and Working Principle
The NTMD4N03R2G is a four-channel, low side, N-channel, logic level, power MOSFET array. It is a high voltage, high-speed power MOSFET which features a fast switching speed and low on-resistance. The array has independent source and gate connections for each transistor, and is highly integrated, allowing for a wide range of applications.
The primary application areas of the NTMD4N03R2G are power management in a wide range of electronic devices, such as portable equipment, industrial and automotive applications, motor control and lighting. The low power loss associated with the MOSFET array, combined with its high frequency operation and low gate charge, make it well-suited for use in power conversion applications.
Working Principle
The NTMD4N03R2G has four N-channel MOSFETs in one package. The MOSFETs are connected in parallel which provides greater current capacity to the load. This can help increase power efficiency by reducing power losses. Each of the four MOSFETs has an independent source connection, an independent gate connection and a common drain connection. When a positive voltage is applied to the gate, the transistor between the source and drain terminals is switched on, allowing current to flow through the drain.
The MOSFET array has a very low on-resistance, meaning that the device offers very high switching speeds while still allowing the user to operate at high levels of power efficiency. This makes it ideal for applications where high power efficiency and high switching speeds are required. The array has a fast turn-off time, allowing the devices to turn off quickly and without creating any additional losses. Additionally, the MOSFETs have very low gate-source capacitances, allowing them to function with very low power input.
Conclusion
In conclusion, the NTMD4N03R2G is an ideal choice for applications where high power efficiency and fast switching speeds are required. The low on-resistance and low gate-source capacitances make it well-suited for use in motor control, lighting, and other power management applications. It is highly integrated with independent source and gate connections, allowing for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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