NTMD4840NR2G Discrete Semiconductor Products

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NTMD4840NR2G is a general-purpose MOSFET technology-based switching array that can be employed in a wide range of applications. It has been developed and manufactured by the world-renowned semiconductor manufacturing company, NXP Semiconductors. It is designed to provide excellent electrical performance in power supply, audio and other electronic applications.

This transistor array boasts low on-state resistance, high channel density, and high operating speed. It is also capable of withstanding harsh operating conditions in a variety of temperature and voltage ranges for long periods of time. Moreover, it offers protection against EMI and thermal shutdowns.

Due to its electrical and thermal performance, NTMD4840NR2G is suitable for many applications, including switch-mode power supplies, lighting systems, motor drives, intelligent remote controls and robotics, among others. It is also used as a power MOSFET in audio equipment and other electronic devices as well.

This MOSFET technology is designed around the principle of a four-point fabrication process, which, according to its manufacturer, provides superior performance and reliability. The array consists of multiple transistors interconnected in parallel and interconnected by a single drain terminal. This four-point fabrication method ensures that each transistor has an independent source and gate in order to provide excellent switching performance.

The device also includes a built-in voltage booster circuit, which helps to improve its performance in switching power supplies. In addition, it has an integrated thermal safety device that can safely shut down the device in case of an over-temperature situation. This device also includes an integrated protective diode that provides protection against reverse-voltage or transient events.

In summary, NTMD4840NR2G is a high-performance switching array that can be used in a variety of applications. It is designed to provide superior electrical and thermal performance, as well as protection against EMI and thermal shutdowns. This array is built on the principle of a four-point fabrication process and includes a voltage booster circuit and an integrated protective diode, making it an ideal choice for applications requiring high levels of reliability, performance and protection.

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