Allicdata Part #: | NTMD6P02R2SG-ND |
Manufacturer Part#: |
NTMD6P02R2SG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 20V 4.8A 8SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 4.8A 750mW Sur... |
DataSheet: | NTMD6P02R2SG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Base Part Number: | NTMD6P02 |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 750mW |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 16V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 33 mOhm @ 6.2A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.8A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTMD6P02R2SG is a transistor developed by NXP Semiconductors and is part of their range of low-voltage Trench MOSFETs (TFETs). It is a dual-gate MOSFET array, which can be used to switch circuits on and off relatively quickly, as both gates are activated with a single signal. This makes the NTMD6P02R2SG an excellent choice for general use microcontrollers and other low-voltage applications.
The NTMD6P02R2SG is designed specifically for low-voltage applications and features the use of advanced trench MOSFET technology. This technology utilizes a deep trench (with a thickness of up to 8 nm) to create an efficient insulated control region. It also helps reduce the on-resistance of the device, increasing its efficiency and allowing for higher switching performance. For this reason, the NTMD6P02R2SG is well-suited for applications where high switching speeds are needed.
The array of both sensing and control gates helps the NTMD6P02R2SG to facilitate precise switching. This is possible because the two gates can be used independently, allowing for precise control of the circuit switch on the signal level. As a result, the device can be used to control the voltages on either side of the switch, making it ideal for low-voltage power switching applications such as battery management.
In addition to its efficient control capability, the NTMD6P02R2SG also offers excellent switching performance. It can operate at up to 500 mA and can switch from On to Off in as little as 1.5 ns, making it suitable for high-speed applications.
Finally, the NTMD6P02R2SG is designed to be robust and reliable, with a low leakage current, low thermal resistance, and high switching frequency. This makes it suitable for a variety of conditions, including automotive and industrial applications.
In summary, the NTMD6P02R2SG is an ideal choice for applications that require precise control, fast switching, and low-voltage operation. Its dual-gate MOSFET array provides precise control and operation, while its advanced trench MOSFET technology enables high-efficiency operation and excellent switching performance. This makes it suitable for a range of low-voltage applications, including general-purpose microcontrollers and battery management.
The specific data is subject to PDF, and the above content is for reference
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