Allicdata Part #: | PDTA113EE,115-ND |
Manufacturer Part#: |
PDTA113EE,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PREBIAS PNP 150MW SC75 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | PDTA113EE,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 1 kOhms |
Resistor - Emitter Base (R2): | 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 40mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 1.5mA, 30mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75 |
Base Part Number: | PDTA113 |
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PDTA113EE,115 application field and working principle
PDTA113EE,115 transistors are classified as single, pre-biased bipolar junction transistors (BJT). These transistors are widely used where high input impedance, low input current and long term reliability are required. They are aimed at providing the highest levels of efficiency and insight into the circuit.
The PDTA113EE,115 transistors are designed to work with low input current, moderate current gain and stable gain. They are suitable for use in high power applications and can handle large input changes. In addition, they provide stable gain for a wide range of supply voltage, frequency and temperature. They also have low input-gate threshold voltage, allowing operation at high speeds.
PDTA113EE,115 are primarily used in power supply applications as they offer higher efficiency and a wide range of supply voltage. They also serve as switch-mode systems, where higher input impedance and high speed performance is needed. Additionally, these transistors can be used in switching converters, class AB amplifiers and motor control.
A basic working principle of the PDTA113EE,115 transistor is that the emitter is biased. This means that a small current (referred to as bias current) passes through the emitter and establishes a base-emitter voltage. When a larger current is then passed through the base-emitter part of the transistor, the base-emitter voltage increases. This causes a current to flow from the collector to the emitter. The amount of current that is present in the collector-emitter part is controlled by the amount of current flowing through the base-emitter part.
For the PDTA113EE,115 transistors, this bias current is typically around 0.1mA and the maximum base current that is available is 100mA in more modern versions of the transistors. The device also includes a built-in protectionstructure which ensures that the temperature of the device does not rise above a certain level. This protection may also be used to ensure that the transistor is protected against reverse current.
In summary, the PDTA113EE,115 transistors are suitable for use in high power applications, due to their high input impedance, low input current and stable gain. They are designed to provide efficient performance and their built-in protection ensures that they are protected against reverse current. These transistors can be used in a variety of applications, such as power supply systems, switch-mode converters and class AB amplifiers.
The specific data is subject to PDF, and the above content is for reference
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