PDTA143EK,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	1µA
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SMT3; MPAK
Base Part Number:	PDTA143

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Introduction of PDTA143EK

PDTA143EK is a single pre-biased bipolar junction transistor (BJT) device, belonging to the Transistors - Bipolar (BJT) - Single, Pre-Biased category. The device is designed to offer superior speed, clarity and isolation while still maintaining excellent efficiency and cost.

Application Fields

PDTA143EK is widely used in the automation, industrial, electrical and audio/video industries. In particular, the device is suitable for medium power switching, amplifier drive, and power management applications. In automation, it can be used for temperature control, humidity and light control, power switching, and process control. In the audio industry, the device can be used for audio mixing, volume control, and signal boosting. In industrial applications, it can be used for motor and power management, current and voltage control, drive circuit design, and machine control. In the electrical field, it can be used for voltage regulators, high voltage rectification, and in-rush current limiting.

Working Principle

The basic operating principle behind PDTA143EK is the transistor effect. This effect is based on the idea that one of three doped regions in a semiconductor material can be used to control the current flow between the other two regions. This is done by means of controlling the electric field, which modifies the number of charge carriers that can pass through the device at any given time. In the case of PDTA143EK, the device is pre-biased, which means that it has two internal terminals that are connected to a voltage source when the device is off. This increases the device\'s speed and efficiency. In operation, PDTA143EK is an NPN transistor, which means that it is composed of an N-doped, P-doped, and N-doped region. When a voltage is applied, electrons will flow from the emitter to the base. This will in turn cause the base-collector junction to open, allowing the electrons to flow from the collector to the emitter, thus allowing current to flow.

Conclusion

The PDTA143EK is a single pre-biased bipolar junction transistor (BJT) device, which has a wide range of applications, including medium power switching, amplifier drive, and power management. The device is also suitable for applications in automation, industrial, electrical and audio/video industries. The transistor effect is the basic working principle behind the device, which increases its speed and efficiency by pre-biasing the two internal terminals of the device when it is turned off.

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