PDTA143XK,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	1µA
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SMT3; MPAK
Base Part Number:	PDTA143

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The PDTA143XK,115 is a single pre-biased bipolar transistor (BJT). These transistors are designed to be used in high-voltage and high-temperature applications and are manufactured with a variety of materials. They are ideal for power amplifiers, radio frequency (RF) amplifiers, and digital signal processing circuits.The PDTA143XK,115 is a NPN transistor with a collector-emitter breakdown voltage of up to 175V and a maximum junction temperature rating of 175°C. The device features a low collector-emitter saturation voltage of 200mV at 1A of current and a low base-emitter voltage of 800mV at 1A. It has a low noise figure of 6 db and a high gain bandwidth product of 1.2 GHz. These features make the PDTA143XK,115 ideal for use in high-end audio equipment.The PDTA143XK,115 is a pre-biased device. This means that the base-emitter voltage is pre-set for a given current, and this voltage can be used as a current source. By connecting the base-emitter junction to a constant voltage source, the device can be configured to remain in its active mode. This is useful for controlling the current flow in the circuit with a low amount of power dissipation.The PDTA143XK,115 is capable of operating at frequencies up to 1GHz and has a low output impedance. This makes it suitable for RF power-based applications such as high-quality radio transmitters and receivers. The device also features an excellent power-handling capability, making it suitable for high-power audio amplification and signal processing circuits. The PDTA143XK,115 is a versatile device that can be used in a variety of applications. In RF applications, it can be used as an amplifier or an oscillator, and as a signal switch in digital signal processing circuits. In audio applications, it can be used for high-end audio amplification, power amplifiers, and pre-amps.To understand the working principle of the PDTA143XK,115, it is important to understand the basic operation of a bipolar transistor. A bipolar transistor is a semiconductor device that is made up of three layers: collector, base, and emitter. When current flows through the collector-base junction, it creates an electric field that lowers the resistance of the base-emitter junction, allowing current to flow from the emitter to the collector. The amount of current that flows is determined by the base current, which can be manipulated to control the amount of current flowing in the circuit. In the case of the PDTA143XK,115, the pre-biased configuration allows the base-emitter voltage to be set to a constant value, and this voltage is used as a current source. This allows the device to remain in its active mode, with the current being controlled by the base current. The gain and frequency response of the device can also be adjusted by varying the base current.The PDTA143XK,115 is a robust device that is capable of withstanding high temperatures and voltages. With its low noise figure, high gain bandwidth, and excellent power-handling capabilities, the device is an excellent choice for a variety of applications, ranging from RF signal processing to high-end audio amplification.

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