PDTA143ZK,115 Allicdata Electronics
Allicdata Part #:

PDTA143ZK,115-ND

Manufacturer Part#:

PDTA143ZK,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PREBIAS PNP 250MW SMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA143ZK,115 datasheetPDTA143ZK,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3; MPAK
Base Part Number: PDTA143
Description

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Introduction

The PDTA143ZK, 115 is a single, pre-biased transistor designed to meet the needs of digital applications. This device is designed to provide a low-power solution and has multiple enhancement and depletion mode characteristics. It is a bipolar junction transistor (BJT) and has been designed with a model of 225mA continuous current rating and a drain voltage that is positive up to 36 volts. Its compatible operating temperature range is -40-125°C, while its typical threshold voltage is 3V.

Applications of the PDTA143ZK,115

The PDTA143ZK, 115 is used for a variety of digital applications, such as low-power IC solutions, high-speed logic circuits, consumer electronics, audio amplifiers, data converters and many more. It is also suitable for time-delay circuits, high-performance amplifier circuits, and low-temperature control circuits.

Working Principle

The PDTA143ZK, 115 transistor is a type of BJT, which consists of three semiconductor layers, one layer of P-type material and two layers of N-type material. When a voltage is applied to the base layer of the transistor, a small current will flow through it and cause the majority carriers to move from the base to the emitter region, thus creating an inverted electric field between them which can switch the emitter region to the collector region, allowing current to flow. The base voltage determines the amount of current that can flow through the transistor, which is why it is used as a control element in many digital applications.

Conclusion

In conclusion, the PDTA143ZK, 115 is a single, pre-biased transistor designed to meet the needs of digital applications with a low-power solution. This device has multiple enhancement and depletion mode characteristics and is used for a variety of digital applications, such as IC solutions, logic circuits, consumer electronics, audio amplifiers and many others. Its working principle is based on the bipolar junction transistor and its threshold voltage is typically 3V.

The specific data is subject to PDF, and the above content is for reference

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