Allicdata Part #: | 568-2159-2-ND |
Manufacturer Part#: |
PDTC143EEF,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PREBIAS NPN 250MW SC89 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTC143EEF,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SC-89 |
Base Part Number: | DTC143 |
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Transistors are semiconductor-based devices that are used in many modern technological devices. One type of transistor is the Bipolar Junction Transistor (BJT). BJTs are used in many technological applications and can be found in amplifiers, switching circuits, and computers. The PDTC143EEF,115 is a pre-biased BJT model manufactured by Rohm Semiconductor.
Before discussing the specific application and working principles of PDTC143EEF,115, it is important to explain the general concept of BJTs. BJTs are three-terminal, unipolar devices. They are made up of both p-type and n-type materials, forming two p-n junctions. The two p-n junctions are connected in series, forming a so-called “bipolar” microstructure.
BJTs can be further divided into two categories: NPN and PNP. NPN transistors have a layer of p-type material sandwiched between two layers of n-type material. PNP transistors are the reverse, with a layer of n-type material sandwiched between two layers of p-type material. The three terminals of a BJT are the base terminal, the emitter terminal, and the collector terminal.
The PDTC143EEF,115 is a single NPN BJT with an integrated pre-biased resistor. The resistor is designed to reduce the startup surge current, which can be damaging to sensitive electronics. The resistor also provides a uniform current for the base terminal, which reduces base current fluctuations. The device’s low voltage and high current capacity make it ideal for use in automotive, industrial and consumer applications.
The working principle of the PDTC143EEF,115 is similar to that of other BJTs. When a voltage is applied to the base terminal, an electric field is created between the p-type and n-type materials. This causes both p-type and n-type carriers to be “pulled” towards the opposite side (creating a hole in the p-type material and an electron in the n-type material). This process is known as “inversion”, which allows the transistor to conduct electric current.
The PDTC143EEF,115 has a variety of applications. It can be used in automotive applications such as ignition systems, fuel injection systems and electric window systems. It is also used in consumer products such as remote controls, motorized toys and audio-visual equipment. The device also finds use in industrial applications, such as HVAC systems, motor drivers and power supplies.
In conclusion, the PDTC143EEF,115 is a single pre-biased NPN BJT manufactured by Rohm Semiconductor. The integrated pre-biased resistor reduces the startup surge current and provides a uniform current for the base terminal. The device’s low voltage and high current capacity make it ideal for use in automotive, industrial and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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