PDTC123EU,115 Discrete Semiconductor Products

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The PDTC123EU,115 is a single, pre-biased bipolar junction transistor (BJT) designed for a wide range of applications, such as consumer electronics, industrial, automotive and military/aerospace. The product is offered as a surface mount device with a wide operating temperature range of -65°C to +150°C.

This transistor is a pre-biased type, meaning it is designed to be used in the active region of device operation, which offers the advantages of improved current gain and switching speed, excellent on-state gate voltages, and a reduced power consumption. The on state resistance of the device is typically 0.013 Ω, while the off state resistance is typically 0.7 Ω.

The PDTC123EU,115 offers a wide range of features such as excellent thermal stability, low saturation voltage, high current gain, fast switching speed, small package size and compatibility with popular industry standard packages. All of these features make the PDTC123EU,115 a suitable choice for a variety of applications.

The PDTC123EU,115 is designed to operate in a wide range of voltage and current conditions. It can operate at supply voltages up to 45V and has a maximum collector-emitter breakdown voltage of 150V. The device also has a maximum collector current rating of 500mA. The typical DC current gain of the device is 250.

This device features a uniquely designed active biasing network that helps provide superior performance over a range of operating conditions. The built-in biasing network also helps to minimize power consumption in a variety of applications. The device has an optimal frequency range of 300 to 1,250kHz and offers an enhanced frequency response over conventional transistors.

The working principle of the PDTC123EU,115 is based on the active biasing of its drain source (MOSFET). By applying the appropriate voltage to the gate of the MOSFET during the active biasing phase, the device is able to achieve high switching speeds and excellent on-state voltage characteristics. Additionally, the built-in active biasing also helps reduce power consumption, making the device an ideal choice for portable, handheld and battery operated applications.

In conclusion, the PDTC123EU,115 is an ideal single, pre-biased bipolar junction transistor that is well suited for a wide range of applications. It has a unique active biasing network that helps provide superior performance characteristics, a wide range of supply voltages and maximum current, and low power consumption. Additionally, the device offers excellent thermal stability, fast switching speeds, and compatibility with popular industry standard packages. These features make the PDTC123EU,115 an excellent choice for a variety of applications.

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