Allicdata Part #: | 1727-3033-2-ND |
Manufacturer Part#: |
PDTC115TT,215 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 250MW TO236AB |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTC115TT,215 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02189 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | PDTC115 |
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Bipolar junction transistors (BJTs) are electronic devices composed of three layers of semiconductor material. BJTs are typically used in applications requiring high-power, high-frequency and/or low-noise performance. Specifically, Single Pre-Biased Transistors (PDTC115TT,215) are especially suited for switching and amplifying applications.
Introduction to PDTC115TT,215
PDTC115TT,215 is a single pre-biased transistor. This device is a 3-pin transistor and is composed of two-terminal collector and two-terminal base. It is an NPN type transistor and supports low-power and high-current requirements. This device is ideal for applications requiring high switching speed, low-power consumption and short circuit protection. This type of transistor is also capable of working in amplifier applications.
PDTC115TT,215 Application Fields
PDTC115TT,215 can be used in various applications. They are often used in switching circuits, similar to its high current PNP counterpart, and are the best choice for applications where high frequency operation is required. The high current characteristics also make it suitable for power switching applications. This type of transistor is also widely used in amplifier applications, as it is able to handle high levels of power, and has a low noise threshold.
PDTC115TT,215 Working Principle
PDTC115TT,215 works on a common emitter configuration, where the emitter is connected to a common ground and the base voltage is supplied to the base terminal. When a voltage is applied to the base terminal, the current flows through the base-collector junction and a base-emitter junction is formed. This creates a current flow from the base-collector junction to the emitter. This current flow causes a change in the base-emitter voltage. This voltage change causes the collector current to increase exponentially, thus allowing for amplification.
Conclusion
PDTC115TT,215 is an ideal choice for applications requiring high frequency operation and short circuit protection. This single pre-biased transistor is highly suitable for various applications such as switching and amplifying. The device works on a common emitter configuration, where a change in the base-emitter voltage causes the collector current to increase exponentially, thus allowing for amplification. The high current characteristics, low power consumption and high switching speed of this device makes it a perfect choice for high-power, high-frequency and low-noise performance applications.
The specific data is subject to PDF, and the above content is for reference
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